Theory study of the geometrical Isomerism influence on hole-transport material's residual potential of organic photoconductive

You Jing; Shirong Wang; Xianggao Li

doi:10.4028/www.scientific.net/AMR.79-82.1197

Theory study of the geometrical Isomerism influence on hole-transport material's residual potential of organic photoconductive

You Jing, Shirong Wang, Xianggao Li

Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Residual potential is a very important performance index of organic photoconductor (OPC). At present, research shows that the purity of charge transport material will seriously influence residual potential of OPC. But in past research we found that some OPC used charge transport material with very high purity still has very high residual potential. With quantum calculation and x-ray diffraction we found that some materials are optical isomer and some have cis-trans isomerism. So in order to improve performance of OPC we should separate isomerism.

Original language	English
Title of host publication	Multi-Functional Materials and Structures II
Pages	1197-1200
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.79-82.1197
Publication status	Published - Dec 1 2009
Event	2nd International Conference on Multi-Functional Materials and Structures, MFMS-2009 - Qingdao, China Duration: Oct 9 2009 → Oct 12 2009

Publication series

Name	Advanced Materials Research
Volume	79-82
ISSN (Print)	1022-6680

Other

Other	2nd International Conference on Multi-Functional Materials and Structures, MFMS-2009
Country	China
City	Qingdao
Period	10/9/09 → 10/12/09

All Science Journal Classification (ASJC) codes

Engineering(all)

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Jing, Y, Wang, S & Li, X 2009, Theory study of the geometrical Isomerism influence on hole-transport material's residual potential of organic photoconductive. in Multi-Functional Materials and Structures II. Advanced Materials Research, vol. 79-82, pp. 1197-1200, 2nd International Conference on Multi-Functional Materials and Structures, MFMS-2009, Qingdao, China, 10/9/09. https://doi.org/10.4028/www.scientific.net/AMR.79-82.1197

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