Thermal conductivity and natural cooling rate of excimer-laser annealed Si

A molecular dynamics study

Byoung Min Lee, Back Seok Seong, Hong Koo Baik, Shinji Munetoh, Teruaki Motooka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To investigate the relationship between the thermal conductivity and the cooling rate, we have performed molecular-dynamics (MD) simulations based on a combination of the Langevin and Newton equations to deal with a heat transfer from l-Si to c-Si. The thermal conductivity of c-Si was measured by the direct method. In order to deal with finite-size effects, different cell sizes perpendicular to the direction of the heat current were used. The values of the thermal conductivity of 58 W/mK and 35.7 W/mK in the Tersoff potential were obtained at 1000 K and 1500 K, respectively. A MD cell with a length of 488.75 Å in the direction of a heat flow was used for estimating the natural cooling rate. The initial c/l interface systems were obtained by setting the temperatures of the MD cell at 1000 K and 1500 K, respectively, for Z ≤ 35 Å and 3800 K for Z > 35 Å. During the natural cooling processes, the temperature of the bottom 10 Å of the MD cell was controlled. The cooling rates of 7.4×1011 K/sec for 1000 K and 5.9×1011 K/sec for 1500 K were obtained, respectively.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages111-116
Number of pages6
Volume910
Publication statusPublished - Jun 12 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

Fingerprint

Excimer lasers
excimer lasers
Molecular dynamics
Thermal conductivity
thermal conductivity
molecular dynamics
Cooling
cooling
cells
Heat transfer
heat transmission
newton
estimating
heat transfer
heat
Temperature
temperature
Computer simulation
simulation
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, B. M., Seong, B. S., Baik, H. K., Munetoh, S., & Motooka, T. (2007). Thermal conductivity and natural cooling rate of excimer-laser annealed Si: A molecular dynamics study. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (Vol. 910, pp. 111-116)

Thermal conductivity and natural cooling rate of excimer-laser annealed Si : A molecular dynamics study. / Lee, Byoung Min; Seong, Back Seok; Baik, Hong Koo; Munetoh, Shinji; Motooka, Teruaki.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910 2007. p. 111-116.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, BM, Seong, BS, Baik, HK, Munetoh, S & Motooka, T 2007, Thermal conductivity and natural cooling rate of excimer-laser annealed Si: A molecular dynamics study. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. vol. 910, pp. 111-116, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/17/06.
Lee BM, Seong BS, Baik HK, Munetoh S, Motooka T. Thermal conductivity and natural cooling rate of excimer-laser annealed Si: A molecular dynamics study. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910. 2007. p. 111-116
Lee, Byoung Min ; Seong, Back Seok ; Baik, Hong Koo ; Munetoh, Shinji ; Motooka, Teruaki. / Thermal conductivity and natural cooling rate of excimer-laser annealed Si : A molecular dynamics study. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. Vol. 910 2007. pp. 111-116
@inproceedings{01fb1778879b42e0b699c2f83f77db2b,
title = "Thermal conductivity and natural cooling rate of excimer-laser annealed Si: A molecular dynamics study",
abstract = "To investigate the relationship between the thermal conductivity and the cooling rate, we have performed molecular-dynamics (MD) simulations based on a combination of the Langevin and Newton equations to deal with a heat transfer from l-Si to c-Si. The thermal conductivity of c-Si was measured by the direct method. In order to deal with finite-size effects, different cell sizes perpendicular to the direction of the heat current were used. The values of the thermal conductivity of 58 W/mK and 35.7 W/mK in the Tersoff potential were obtained at 1000 K and 1500 K, respectively. A MD cell with a length of 488.75 {\AA} in the direction of a heat flow was used for estimating the natural cooling rate. The initial c/l interface systems were obtained by setting the temperatures of the MD cell at 1000 K and 1500 K, respectively, for Z ≤ 35 {\AA} and 3800 K for Z > 35 {\AA}. During the natural cooling processes, the temperature of the bottom 10 {\AA} of the MD cell was controlled. The cooling rates of 7.4×1011 K/sec for 1000 K and 5.9×1011 K/sec for 1500 K were obtained, respectively.",
author = "Lee, {Byoung Min} and Seong, {Back Seok} and Baik, {Hong Koo} and Shinji Munetoh and Teruaki Motooka",
year = "2007",
month = "6",
day = "12",
language = "English",
isbn = "1558998667",
volume = "910",
pages = "111--116",
booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006",

}

TY - GEN

T1 - Thermal conductivity and natural cooling rate of excimer-laser annealed Si

T2 - A molecular dynamics study

AU - Lee, Byoung Min

AU - Seong, Back Seok

AU - Baik, Hong Koo

AU - Munetoh, Shinji

AU - Motooka, Teruaki

PY - 2007/6/12

Y1 - 2007/6/12

N2 - To investigate the relationship between the thermal conductivity and the cooling rate, we have performed molecular-dynamics (MD) simulations based on a combination of the Langevin and Newton equations to deal with a heat transfer from l-Si to c-Si. The thermal conductivity of c-Si was measured by the direct method. In order to deal with finite-size effects, different cell sizes perpendicular to the direction of the heat current were used. The values of the thermal conductivity of 58 W/mK and 35.7 W/mK in the Tersoff potential were obtained at 1000 K and 1500 K, respectively. A MD cell with a length of 488.75 Å in the direction of a heat flow was used for estimating the natural cooling rate. The initial c/l interface systems were obtained by setting the temperatures of the MD cell at 1000 K and 1500 K, respectively, for Z ≤ 35 Å and 3800 K for Z > 35 Å. During the natural cooling processes, the temperature of the bottom 10 Å of the MD cell was controlled. The cooling rates of 7.4×1011 K/sec for 1000 K and 5.9×1011 K/sec for 1500 K were obtained, respectively.

AB - To investigate the relationship between the thermal conductivity and the cooling rate, we have performed molecular-dynamics (MD) simulations based on a combination of the Langevin and Newton equations to deal with a heat transfer from l-Si to c-Si. The thermal conductivity of c-Si was measured by the direct method. In order to deal with finite-size effects, different cell sizes perpendicular to the direction of the heat current were used. The values of the thermal conductivity of 58 W/mK and 35.7 W/mK in the Tersoff potential were obtained at 1000 K and 1500 K, respectively. A MD cell with a length of 488.75 Å in the direction of a heat flow was used for estimating the natural cooling rate. The initial c/l interface systems were obtained by setting the temperatures of the MD cell at 1000 K and 1500 K, respectively, for Z ≤ 35 Å and 3800 K for Z > 35 Å. During the natural cooling processes, the temperature of the bottom 10 Å of the MD cell was controlled. The cooling rates of 7.4×1011 K/sec for 1000 K and 5.9×1011 K/sec for 1500 K were obtained, respectively.

UR - http://www.scopus.com/inward/record.url?scp=34249940873&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249940873&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558998667

SN - 9781558998667

VL - 910

SP - 111

EP - 116

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006

ER -