Thermal conductivity measurement of indium-gallium-zinc-oxide thin films utilizing three-omega method

Rauf Khan, Shim Chang-Hoon, Reiji Hattori

Research output: Contribution to journalConference articlepeer-review

Abstract

The temperature dependence of cross-plane thermal conductivity of Indium-Gallium-Zinc-Oxide (IGZO) thin film was measured using a differential three-omega method. The IGZO thin films were deposited on Al2O3 substrate by DC sputtering in room temperature. The thermal conductivities were observed to be 1.6, 1.8 and 2.6 W/(m·K) at some different oxygen partial pressures, 0%, 10%, and 65%, respectively. Furthermore, the thermal conductivity of IGZO thin film is decreasing with increasing the measurement ambient temperature according to the crystalline material typical characteristics. These results notify that a crystallinity exists inside the IGZO films and this crystalline phase governs the heat conduction into IGZO films.

Original languageEnglish
Pages (from-to)1365-1368
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume51
Issue number1
DOIs
Publication statusPublished - 2020
Event57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
Duration: Aug 3 2020Aug 7 2020

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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