Thermal Conductivity of Nano-Crystallized Indium-Gallium-Zinc Oxide Thin Films Determined by Differential Three-Omega Method

Rauf Khan, Michitaka Ohtaki, Satoshi Hata, Koji Miyazaki, Reiji Hattori

Research output: Contribution to journalArticlepeer-review

Abstract

The temperature dependence thermal conductivity of the indium-gallium-zinc oxide (IGZO) thin films was investigated with the differential three-omega method for the clear demonstration of nanocrystallinity. The thin films were deposited on an alumina (α-Al2O3) substrate by direct current (DC) magnetron sputtering at different oxygen partial pressures ([PO2] = 0%, 10%, and 65%). Their thermal conductivities at room temperature were measured to be 1.65, 1.76, and 2.58 Wm-1K-1, respectively. The thermal conductivities decreased with an increase in the ambient measurement temperature. This thermal property is similar to that of crystalline materials. Electron microscopy observations revealed the presence of nanocrystals embedded in the amorphous matrix of the IGZO films. The typical size of the nanocrystals was approximately 2-5 nm with the lattice distance of about 0.24-0.26 nm. These experimental results indicate that the nanocrystalline microstructure controls the heat conduction in the IGZO films.

Original languageEnglish
JournalNanomaterials
Volume11
Issue number6
DOIs
Publication statusPublished - Jun 11 2021

Fingerprint

Dive into the research topics of 'Thermal Conductivity of Nano-Crystallized Indium-Gallium-Zinc Oxide Thin Films Determined by Differential Three-Omega Method'. Together they form a unique fingerprint.

Cite this