Thermal conductivity of SiC calculated by molecular dynamics

Takahiro Kawamura, Daisuke Hori, Yoshihiro Kangawa, Koichi Kakimoto, Masashi Yoshimura, Yusuke Mori

Research output: Contribution to journalArticle

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Abstract

We calculated the thermal conductivity of SiC by molecular dynamics simulation and investigated the effects of impurities on the thermal conductivity of SiC. We used Tersoff potential to express the structure of a SiC crystal. Thermal conductivity was obtained using Green-Kubo's equation. The results show that the thermal conductivities of perfect 2H-, 3C-, 4H-, and 6H-SiC polytypes were in the range of 260 to 420 W/(m·K) and that the thermal conductivity of 3C-SiC was the largest among the polytypes. The thermal conductivities of 4H-SiC decreased with an increase in impurity concentration above 1.0 × 1017 to 1.0 × 1018 1/cm 3.

Original languageEnglish
Pages (from-to)8898-8901
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number12
DOIs
Publication statusPublished - Dec 19 2008

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Molecular dynamics
Thermal conductivity
thermal conductivity
molecular dynamics
Impurities
impurities
Crystals
Computer simulation
crystals
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Thermal conductivity of SiC calculated by molecular dynamics. / Kawamura, Takahiro; Hori, Daisuke; Kangawa, Yoshihiro; Kakimoto, Koichi; Yoshimura, Masashi; Mori, Yusuke.

In: Japanese Journal of Applied Physics, Vol. 47, No. 12, 19.12.2008, p. 8898-8901.

Research output: Contribution to journalArticle

Kawamura, Takahiro ; Hori, Daisuke ; Kangawa, Yoshihiro ; Kakimoto, Koichi ; Yoshimura, Masashi ; Mori, Yusuke. / Thermal conductivity of SiC calculated by molecular dynamics. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 12. pp. 8898-8901.
@article{c27cae360a094a5ea63b32554eb3384a,
title = "Thermal conductivity of SiC calculated by molecular dynamics",
abstract = "We calculated the thermal conductivity of SiC by molecular dynamics simulation and investigated the effects of impurities on the thermal conductivity of SiC. We used Tersoff potential to express the structure of a SiC crystal. Thermal conductivity was obtained using Green-Kubo's equation. The results show that the thermal conductivities of perfect 2H-, 3C-, 4H-, and 6H-SiC polytypes were in the range of 260 to 420 W/(m·K) and that the thermal conductivity of 3C-SiC was the largest among the polytypes. The thermal conductivities of 4H-SiC decreased with an increase in impurity concentration above 1.0 × 1017 to 1.0 × 1018 1/cm 3.",
author = "Takahiro Kawamura and Daisuke Hori and Yoshihiro Kangawa and Koichi Kakimoto and Masashi Yoshimura and Yusuke Mori",
year = "2008",
month = "12",
day = "19",
doi = "10.1143/JJAP.47.8898",
language = "English",
volume = "47",
pages = "8898--8901",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "12",

}

TY - JOUR

T1 - Thermal conductivity of SiC calculated by molecular dynamics

AU - Kawamura, Takahiro

AU - Hori, Daisuke

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Yoshimura, Masashi

AU - Mori, Yusuke

PY - 2008/12/19

Y1 - 2008/12/19

N2 - We calculated the thermal conductivity of SiC by molecular dynamics simulation and investigated the effects of impurities on the thermal conductivity of SiC. We used Tersoff potential to express the structure of a SiC crystal. Thermal conductivity was obtained using Green-Kubo's equation. The results show that the thermal conductivities of perfect 2H-, 3C-, 4H-, and 6H-SiC polytypes were in the range of 260 to 420 W/(m·K) and that the thermal conductivity of 3C-SiC was the largest among the polytypes. The thermal conductivities of 4H-SiC decreased with an increase in impurity concentration above 1.0 × 1017 to 1.0 × 1018 1/cm 3.

AB - We calculated the thermal conductivity of SiC by molecular dynamics simulation and investigated the effects of impurities on the thermal conductivity of SiC. We used Tersoff potential to express the structure of a SiC crystal. Thermal conductivity was obtained using Green-Kubo's equation. The results show that the thermal conductivities of perfect 2H-, 3C-, 4H-, and 6H-SiC polytypes were in the range of 260 to 420 W/(m·K) and that the thermal conductivity of 3C-SiC was the largest among the polytypes. The thermal conductivities of 4H-SiC decreased with an increase in impurity concentration above 1.0 × 1017 to 1.0 × 1018 1/cm 3.

UR - http://www.scopus.com/inward/record.url?scp=59349097273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59349097273&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.8898

DO - 10.1143/JJAP.47.8898

M3 - Article

AN - SCOPUS:59349097273

VL - 47

SP - 8898

EP - 8901

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -