Thermal conductivity of SiC nanowire formed by combustion synthesis

Koji Takahashi, Yohei Ito, Tatsuya Ikuta, Takashi Nishiyama, Motoo Fujii, Xing Zhang, Andrzej Huczko

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Abstract

This paper reports on the measurement of the thermal conductivity of an individual silicon carbide (SiC) nanowire of 140 nm diameter. T-type nanosensor and high-resolution transmission electron microscopy (HRTEM) are applied to obtain reliable property data. HRTEM images show that this nanowire has highly-crystalline SiC core of 126 nm diameter and surrounding amorphous silicon-dioxide layer of 7 nm thickness. Thermal contact resistance is estimated by using a simple analysis of the amorphous-carbon nanostructure between nanowire and nanosensor. Obtained apparent thermal conductivity of this nanowire suggests the thermal conductivity of SiC core is over 100W·m -1·K-1 at room temperature, which is much greater than the past-reported data of thin film but less than the pure bulk data. Compared with bulk samples, phonon scattering mechanism is also discussed.

Original languageEnglish
Pages (from-to)119-125
Number of pages7
JournalHigh Temperatures - High Pressures
Volume37
Issue number2
Publication statusPublished - 2008

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Physical and Theoretical Chemistry

Cite this

Takahashi, K., Ito, Y., Ikuta, T., Nishiyama, T., Fujii, M., Zhang, X., & Huczko, A. (2008). Thermal conductivity of SiC nanowire formed by combustion synthesis. High Temperatures - High Pressures, 37(2), 119-125.