Thermal desorption spectroscopy and molecular beam time-of-flight studies of silicon wafer ultraviolet/ozone cleaning

K. Yamaguchi, Y. Uematsu, Yoshifumi Ikoma, F. Watanabe, T. Motooka, T. Igarashi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ultraviolet (UV)/ozone cleaning is a promising way of decontaminating silicon wafers for industrial very large scale integrated processing. We have investigated the cleaning process in high-vacuum conditions utilizing a pulsed supersonic valve and an excimer lamp. With this setup, we are able to supply atomic oxygen onto Si surfaces with and without the simultaneous UV light exposure. We have discovered that thermal desorption spectroscopy analysis of the surface adsorbed species shows marked differences in the wafers processed under different conditions in high vacuum. We have confirmed that UV irradiation is a very essential factor in the UV/ozone cleaning process. In addition, we have carried out time-resolved studies of species coming off the wafer surfaces during UV/ozone cleaning, and found that the main by-products are CO, CO2, and H2O. The hydrocarbon removal reaction is not oxygen-supply limited.

Original languageEnglish
Pages (from-to)277-281
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number2
Publication statusPublished - Mar 1 1997

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Thermal desorption spectroscopy
Molecular beams
Silicon wafers
Ozone
cleaning
molecular beams
ozone
Cleaning
desorption
wafers
silicon
high vacuum
spectroscopy
Vacuum
Oxygen supply
Time and motion study
oxygen
excimers
Electric lamps
ultraviolet radiation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Thermal desorption spectroscopy and molecular beam time-of-flight studies of silicon wafer ultraviolet/ozone cleaning. / Yamaguchi, K.; Uematsu, Y.; Ikoma, Yoshifumi; Watanabe, F.; Motooka, T.; Igarashi, T.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 01.03.1997, p. 277-281.

Research output: Contribution to journalArticle

@article{05a24b4f28d2439391b453f2003bfaf3,
title = "Thermal desorption spectroscopy and molecular beam time-of-flight studies of silicon wafer ultraviolet/ozone cleaning",
abstract = "Ultraviolet (UV)/ozone cleaning is a promising way of decontaminating silicon wafers for industrial very large scale integrated processing. We have investigated the cleaning process in high-vacuum conditions utilizing a pulsed supersonic valve and an excimer lamp. With this setup, we are able to supply atomic oxygen onto Si surfaces with and without the simultaneous UV light exposure. We have discovered that thermal desorption spectroscopy analysis of the surface adsorbed species shows marked differences in the wafers processed under different conditions in high vacuum. We have confirmed that UV irradiation is a very essential factor in the UV/ozone cleaning process. In addition, we have carried out time-resolved studies of species coming off the wafer surfaces during UV/ozone cleaning, and found that the main by-products are CO, CO2, and H2O. The hydrocarbon removal reaction is not oxygen-supply limited.",
author = "K. Yamaguchi and Y. Uematsu and Yoshifumi Ikoma and F. Watanabe and T. Motooka and T. Igarashi",
year = "1997",
month = "3",
day = "1",
language = "English",
volume = "15",
pages = "277--281",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "0734-211X",
number = "2",

}

TY - JOUR

T1 - Thermal desorption spectroscopy and molecular beam time-of-flight studies of silicon wafer ultraviolet/ozone cleaning

AU - Yamaguchi, K.

AU - Uematsu, Y.

AU - Ikoma, Yoshifumi

AU - Watanabe, F.

AU - Motooka, T.

AU - Igarashi, T.

PY - 1997/3/1

Y1 - 1997/3/1

N2 - Ultraviolet (UV)/ozone cleaning is a promising way of decontaminating silicon wafers for industrial very large scale integrated processing. We have investigated the cleaning process in high-vacuum conditions utilizing a pulsed supersonic valve and an excimer lamp. With this setup, we are able to supply atomic oxygen onto Si surfaces with and without the simultaneous UV light exposure. We have discovered that thermal desorption spectroscopy analysis of the surface adsorbed species shows marked differences in the wafers processed under different conditions in high vacuum. We have confirmed that UV irradiation is a very essential factor in the UV/ozone cleaning process. In addition, we have carried out time-resolved studies of species coming off the wafer surfaces during UV/ozone cleaning, and found that the main by-products are CO, CO2, and H2O. The hydrocarbon removal reaction is not oxygen-supply limited.

AB - Ultraviolet (UV)/ozone cleaning is a promising way of decontaminating silicon wafers for industrial very large scale integrated processing. We have investigated the cleaning process in high-vacuum conditions utilizing a pulsed supersonic valve and an excimer lamp. With this setup, we are able to supply atomic oxygen onto Si surfaces with and without the simultaneous UV light exposure. We have discovered that thermal desorption spectroscopy analysis of the surface adsorbed species shows marked differences in the wafers processed under different conditions in high vacuum. We have confirmed that UV irradiation is a very essential factor in the UV/ozone cleaning process. In addition, we have carried out time-resolved studies of species coming off the wafer surfaces during UV/ozone cleaning, and found that the main by-products are CO, CO2, and H2O. The hydrocarbon removal reaction is not oxygen-supply limited.

UR - http://www.scopus.com/inward/record.url?scp=0000455851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000455851&partnerID=8YFLogxK

M3 - Article

VL - 15

SP - 277

EP - 281

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 0734-211X

IS - 2

ER -