Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)2

Hirofumi Wada, Tomonori Sakata, Akihiro Nakamura, Akihiro Mitsuda, Masayuki Shiga, Yasunori Ikeda, Yoshichika Bando

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The thermal expansion and temperature dependence of electrical resistivity were measured for EuNi2(Si1-xGex)2, which shows a valence transition against temperature in 0.5≤x≤0.82. A first-order phase transition was observed in the temperature dependence of the lattice parameters of x = 0.79 and 0.82, while the lattice parameters vary continuously with temperature for x≤0.70. The temperature dependence of electrical resistivity shows a peak at the valence transition temperature. The origin of the peak is discussed on the basis of the dynamic alloy model.

Original languageEnglish
Pages (from-to)950-953
Number of pages4
JournalJournal of the Physical Society of Japan
Volume68
Issue number3
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes

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thermal expansion
temperature dependence
electrical resistivity
lattice parameters
transition temperature
valence
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)2 . / Wada, Hirofumi; Sakata, Tomonori; Nakamura, Akihiro; Mitsuda, Akihiro; Shiga, Masayuki; Ikeda, Yasunori; Bando, Yoshichika.

In: Journal of the Physical Society of Japan, Vol. 68, No. 3, 01.01.1999, p. 950-953.

Research output: Contribution to journalArticle

Wada, Hirofumi ; Sakata, Tomonori ; Nakamura, Akihiro ; Mitsuda, Akihiro ; Shiga, Masayuki ; Ikeda, Yasunori ; Bando, Yoshichika. / Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)2 In: Journal of the Physical Society of Japan. 1999 ; Vol. 68, No. 3. pp. 950-953.
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AU - Shiga, Masayuki

AU - Ikeda, Yasunori

AU - Bando, Yoshichika

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