TY - JOUR
T1 - Thermal stability of B in poly-SiGe on SiON
AU - Sadoh, T.
AU - Fitrianto,
AU - Kunigami, M.
AU - Kenjo, A.
AU - Miyauchi, A.
AU - Inoue, H.
AU - Miyao, M.
N1 - Funding Information:
A part of this work was supported by the grant-in-aid for scientific research from the Ministry of Education, Culture, Science, and Technology of Japan.
PY - 2002/2/14
Y1 - 2002/2/14
N2 - Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.
AB - Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.
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U2 - 10.1016/S0921-5107(01)00816-9
DO - 10.1016/S0921-5107(01)00816-9
M3 - Article
AN - SCOPUS:0037074867
VL - 89
SP - 129
EP - 132
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -