Thermal stability of B in poly-SiGe on SiON

T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, M. Miyao

Research output: Contribution to journalArticle

Abstract

Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume89
Issue number1-3
DOIs
Publication statusPublished - Feb 14 2002

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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