Thermal stability of B in poly-SiGe on SiON

T. Sadoh; Fitrianto; M. Kunigami; A. Kenjo; A. Miyauchi; H. Inoue; M. Miyao

doi:10.1016/S0921-5107(01)00816-9

Thermal stability of B in poly-SiGe on SiON

T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, M. Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Abstract

Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si_0.6Ge_0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	89
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(01)00816-9
Publication status	Published - Feb 14 2002

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Thermal stability of B in poly-SiGe on SiON",

abstract = "Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.",

author = "T. Sadoh and Fitrianto and M. Kunigami and A. Kenjo and A. Miyauchi and H. Inoue and M. Miyao",

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T1 - Thermal stability of B in poly-SiGe on SiON

AU - Sadoh, T.

AU - Fitrianto,

AU - Kunigami, M.

AU - Kenjo, A.

AU - Miyauchi, A.

AU - Inoue, H.

AU - Miyao, M.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.

AB - Thermal stability of B atoms in in situ doped poly-SiGe films has been investigated. After annealing at 600-900 °C, the carrier concentration in the films decreased with increasing annealing time, which was due to transition from the super-saturated concentration of B for as-deposited films to the solid solubility at the annealing temperature. Thermal stability of B atoms was significantly improved by Ge doping, e.g. the stability in poly-Si0.6Ge0.4 films was four times as high as that in poly-Si films. The deactivation process of B atoms could be separated into the fast and slow processes. The time constants for both processes did not depend on the Ge fraction, while the ratio of deactivated B atoms in the fast process to those in the slow process decreased by Ge doping. The two-state model has been proposed, and explained the improved thermal stability of B atoms by Ge doping.

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