TY - JOUR
T1 - Thermal stress induced dislocation distribution in directional solidification of Si for PV application
AU - Jiptner, Karolin
AU - Gao, Bing
AU - Harada, Hirofumi
AU - Miyamura, Yoshiji
AU - Fukuzawa, Masayuki
AU - Kakimoto, Koichi
AU - Sekiguchi, Takashi
N1 - Funding Information:
The authors thank Dr. H. Yamaguchi (AIST, Japan) for permission to use the XRT equipment. We also thank Prof. Y. Ohshita, Dr. T. Tachibana and Mr. T. Kojima (TTI, Japan) for assistance in crystal growth. This work is supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI), Japan.
PY - 2014/12/15
Y1 - 2014/12/15
N2 - This paper presents the limitation of the cast technique for silicon growth and the obstacle to reduce the dislocation density below 103 cm-2. The thermal stress induced dislocation density, independent of other dislocation sources, is determined and the result suggests that local dislocation densities as high as 104 cm-2 are readily introduced alone in the cooling period of the crystal growth. Areas of high residual strain and dislocation densities are identified and presented. The experimental results are correlated with numerical simulation based on a three-dimensional Haasen-Alexander-Sumino (HAS) model. The dislocation introduction is caused by an activation of different slip systems in different ingot areas.
AB - This paper presents the limitation of the cast technique for silicon growth and the obstacle to reduce the dislocation density below 103 cm-2. The thermal stress induced dislocation density, independent of other dislocation sources, is determined and the result suggests that local dislocation densities as high as 104 cm-2 are readily introduced alone in the cooling period of the crystal growth. Areas of high residual strain and dislocation densities are identified and presented. The experimental results are correlated with numerical simulation based on a three-dimensional Haasen-Alexander-Sumino (HAS) model. The dislocation introduction is caused by an activation of different slip systems in different ingot areas.
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U2 - 10.1016/j.jcrysgro.2014.09.017
DO - 10.1016/j.jcrysgro.2014.09.017
M3 - Article
AN - SCOPUS:84939653737
VL - 408
SP - 19
EP - 24
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -