Thermal study of a silylmethylated fullerene leading to preparation of its vacuum deposited thin films

Hideo Nagashima, Yoshiyuki Kato, Hirohisa Satoh, Naoki Kamegashima, Kenji Itoh, Oi Kazuhiro, Yahachi Saito

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Thermal study of a C60 derivative containing a siloxane structure revealed that it was unstable above 350 deg;C. A major decomposition pathway was formation of C60 and (Me3Si)2O presumably via homolysis of bonds between the α-carbon of the silyl group and the cage carbon. By careful control of the crucible temperature below 350 °C, amorphous vapor-deposited thin films on NaCl or mica were successfully prepared.

Original languageEnglish
Pages (from-to)519-520
Number of pages2
JournalChemistry Letters
Issue number7
DOIs
Publication statusPublished - Jan 1 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Fingerprint Dive into the research topics of 'Thermal study of a silylmethylated fullerene leading to preparation of its vacuum deposited thin films'. Together they form a unique fingerprint.

Cite this