Thermal study of a silylmethylated fullerene leading to preparation of its vacuum deposited thin films

Hideo Nagashima, Yoshiyuki Kato, Hirohisa Satoh, Naoki Kamegashima, Kenji Itoh, Oi Kazuhiro, Yahachi Saito

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Thermal study of a C60 derivative containing a siloxane structure revealed that it was unstable above 350 deg;C. A major decomposition pathway was formation of C60 and (Me3Si)2O presumably via homolysis of bonds between the α-carbon of the silyl group and the cage carbon. By careful control of the crucible temperature below 350 °C, amorphous vapor-deposited thin films on NaCl or mica were successfully prepared.

Original languageEnglish
Pages (from-to)519-520
Number of pages2
JournalChemistry Letters
Issue number7
DOIs
Publication statusPublished - Jan 1 1996
Externally publishedYes

Fingerprint

Fullerenes
Carbon
Vacuum
Siloxanes
Thin films
Crucibles
Vapors
Derivatives
Decomposition
Temperature
Hot Temperature
mica

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Thermal study of a silylmethylated fullerene leading to preparation of its vacuum deposited thin films. / Nagashima, Hideo; Kato, Yoshiyuki; Satoh, Hirohisa; Kamegashima, Naoki; Itoh, Kenji; Kazuhiro, Oi; Saito, Yahachi.

In: Chemistry Letters, No. 7, 01.01.1996, p. 519-520.

Research output: Contribution to journalArticle

Nagashima, Hideo ; Kato, Yoshiyuki ; Satoh, Hirohisa ; Kamegashima, Naoki ; Itoh, Kenji ; Kazuhiro, Oi ; Saito, Yahachi. / Thermal study of a silylmethylated fullerene leading to preparation of its vacuum deposited thin films. In: Chemistry Letters. 1996 ; No. 7. pp. 519-520.
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