Thermally stable operation of h-terminated diamond FETs by NO 2 adsorption and Al 2O 3 passivation

Kazuyuki Hirama; Hisashi Sato; Yuichi Harada; Hideki Yamamoto; Makoto Kasu

doi:10.1109/LED.2012.2200230

Thermally stable operation of h-terminated diamond FETs by NO ₂ adsorption and Al ₂O ₃ passivation

Kazuyuki Hirama, Hisashi Sato, Yuichi Harada, Hideki Yamamoto, Makoto Kasu

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Using the NO ₂ adsorption and Al ₂O ₃ passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I _DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I _DS of-1000 mA/mm and an RF output power density of 2 W/mm.

Original language	English
Article number	6230604
Pages (from-to)	1111-1113
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	8
DOIs	https://doi.org/10.1109/LED.2012.2200230
Publication status	Published - 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2200230

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abstract = "Using the NO 2 adsorption and Al 2O 3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I DS of-1000 mA/mm and an RF output power density of 2 W/mm.",

author = "Kazuyuki Hirama and Hisashi Sato and Yuichi Harada and Hideki Yamamoto and Makoto Kasu",

year = "2012",

doi = "10.1109/LED.2012.2200230",

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AU - Hirama, Kazuyuki

AU - Sato, Hisashi

AU - Harada, Yuichi

AU - Yamamoto, Hideki

AU - Kasu, Makoto

PY - 2012

Y1 - 2012

N2 - Using the NO 2 adsorption and Al 2O 3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I DS of-1000 mA/mm and an RF output power density of 2 W/mm.

AB - Using the NO 2 adsorption and Al 2O 3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I DS of-1000 mA/mm and an RF output power density of 2 W/mm.

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Thermally stable operation of h-terminated diamond FETs by NO ₂ adsorption and Al ₂O ₃ passivation

Abstract

All Science Journal Classification (ASJC) codes

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