Thermally stable operation of h-terminated diamond FETs by NO 2 adsorption and Al 2O 3 passivation

Kazuyuki Hirama, Hisashi Sato, Yuichi Harada, Hideki Yamamoto, Makoto Kasu

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Abstract

Using the NO 2 adsorption and Al 2O 3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 °C in a vacuum for the first time. At 200 °C, the drain current I DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 °C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 μm showed high maximum I DS of-1000 mA/mm and an RF output power density of 2 W/mm.

Original languageEnglish
Article number6230604
Pages (from-to)1111-1113
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number8
DOIs
Publication statusPublished - Jul 9 2012
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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