Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions

Tsunashi Shimizu, Yuki Seta, Toru Akiyama, Abdul Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Akira Kusaba, Yoshihiro Kangawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We perform an improved thermodynamic analysis of nonpolar (11¯00) and (112¯0) surfaces for AlN and GaN to elucidate the difference in growth condition among various types of nonpolar and polar surfaces during metalorganic vapor-phase epitaxy (MOVPE). It is found that the maximum growth temperature of (11¯00) surface is lower than those of (0001) and (0001¯) surfaces. In contrast, the maximum growth temperature of (112¯0) surface is high compared to that of (0001) surface. This orientation dependence corresponds to the relative stability between polar and nonpolar reconstructed surfaces. These results offer a way to provide the optimum growth conditions of AlN and GaN for the MOVPE.

Original languageEnglish
Article number028003
JournalJapanese Journal of Applied Physics
Volume59
Issue number2
DOIs
Publication statusPublished - Jan 1 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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