We perform an improved thermodynamic analysis of nonpolar (11¯00) and (112¯0) surfaces for AlN and GaN to elucidate the difference in growth condition among various types of nonpolar and polar surfaces during metalorganic vapor-phase epitaxy (MOVPE). It is found that the maximum growth temperature of (11¯00) surface is lower than those of (0001) and (0001¯) surfaces. In contrast, the maximum growth temperature of (112¯0) surface is high compared to that of (0001) surface. This orientation dependence corresponds to the relative stability between polar and nonpolar reconstructed surfaces. These results offer a way to provide the optimum growth conditions of AlN and GaN for the MOVPE.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)