TY - JOUR
T1 - Thermodynamic analysis of (0001) and (0001) GaN metalorganic vapor phase epitaxy
AU - Kusaba, Akira
AU - Kangawa, Yoshihiro
AU - Kempisty, Pawel
AU - Valencia, Hubert
AU - Shiraishi, Kenji
AU - Kumagai, Yoshinao
AU - Kakimoto, Koichi
AU - Koukitu, Akinori
N1 - Funding Information:
One of the authors (A. Kusaba) is supported by a Grant-in-Aid for JSPS Research Fellow (No. JP16J04128). This research was partially supported by the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT), through its "Program for research and development of next-generation semiconductor to realize energy-saving society", JST SICORP (Grant Number 16813791B), the European Union's Horizon 2020 research and innovation program (Grant Number 720527/InRel-NPower project), and JSPS KAKENHI (Grant Number JP16H06418).
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/7
Y1 - 2017/7
N2 - We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and (0001) surface states. Surface reconstruction, which depends on growth conditions such as temperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth processes, we investigated the driving force of precursor deposition to form the surface phase defined stoichiometrically. In both N2 and H2 carrier gas cases, we showed surface phase diagrams, calculated driving forces, and discussed the difference in growth orientation.
AB - We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and (0001) surface states. Surface reconstruction, which depends on growth conditions such as temperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth processes, we investigated the driving force of precursor deposition to form the surface phase defined stoichiometrically. In both N2 and H2 carrier gas cases, we showed surface phase diagrams, calculated driving forces, and discussed the difference in growth orientation.
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U2 - 10.7567/JJAP.56.070304
DO - 10.7567/JJAP.56.070304
M3 - Article
AN - SCOPUS:85021786344
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
M1 - 070304
ER -