Thermodynamic analysis of AlGaN HVPE growth

Akinori Koukitu, Jun Kikuchi, Yoshihiro Kangawa, Yoshinao Kumagai

Research output: Contribution to journalConference article

24 Citations (Scopus)

Abstract

A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).

Original languageEnglish
Pages (from-to)47-54
Number of pages8
JournalJournal of Crystal Growth
Volume281
Issue number1
DOIs
Publication statusPublished - Jul 15 2005
Externally publishedYes
EventThe Internbational Workshop on Bulk Nitride Semiconductors III -
Duration: Sep 4 2004Sep 9 2004

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Vapor phase epitaxy
Hydrides
vapor phase epitaxy
Partial pressure
hydrides
partial pressure
Hydrogen
Thermodynamics
thermodynamics
hydrogen
Gases
temperature ratio
gases
low pressure
aluminum gallium nitride
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Thermodynamic analysis of AlGaN HVPE growth. / Koukitu, Akinori; Kikuchi, Jun; Kangawa, Yoshihiro; Kumagai, Yoshinao.

In: Journal of Crystal Growth, Vol. 281, No. 1, 15.07.2005, p. 47-54.

Research output: Contribution to journalConference article

Koukitu, Akinori ; Kikuchi, Jun ; Kangawa, Yoshihiro ; Kumagai, Yoshinao. / Thermodynamic analysis of AlGaN HVPE growth. In: Journal of Crystal Growth. 2005 ; Vol. 281, No. 1. pp. 47-54.
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