Thermodynamic analysis of AlGaN HVPE growth

Akinori Koukitu, Jun Kikuchi, Yoshihiro Kangawa, Yoshinao Kumagai

Research output: Contribution to journalConference article

24 Citations (Scopus)

Abstract

A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).

Original languageEnglish
Pages (from-to)47-54
Number of pages8
JournalJournal of Crystal Growth
Volume281
Issue number1
DOIs
Publication statusPublished - Jul 15 2005
EventThe Internbational Workshop on Bulk Nitride Semiconductors III -
Duration: Sep 4 2004Sep 9 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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