Thermodynamic analysis of coherently grown GaAsN/Ge: Effects of different gaseous sources

Jun Kawano, Yoshihiro Kangawa, Tomoe Yayama, Koichi Kakimoto, Akinori Koukitu

Research output: Contribution to journalArticle

Abstract

Thermodynamic analysis of coherently grown GaAs1-xNx on Ge with low N content was performed to determine the relationship between solid composition and growth conditions. In this study, a new algorithm for the simulation code, which is applicable to wider combinations of gaseous sources than the traditional algorithm, was developed to determine the influence of different gaseous sources on N incorporation. Using this code here we successfully compared two cases: one is a system using trimethylgallium (TMG), AsH3, and NH3, and the other uses dimethylhydrazine (DMHy) instead of NH3. It was found that the optimal N/As ratio of input gas in the system using DMHy was much lower than that using NH3. This shows that the newly developed algorithm could be a useful tool for analyzing the N incorporation during the vapor growth of GaAs1-xNx.

Original languageEnglish
Article number045601
JournalJapanese journal of applied physics
Volume52
Issue number4 PART 1
DOIs
Publication statusPublished - Apr 1 2013

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dimethylhydrazines
Thermodynamics
thermodynamics
Vapors
vapors
Chemical analysis
Gases
gases
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Thermodynamic analysis of coherently grown GaAsN/Ge : Effects of different gaseous sources. / Kawano, Jun; Kangawa, Yoshihiro; Yayama, Tomoe; Kakimoto, Koichi; Koukitu, Akinori.

In: Japanese journal of applied physics, Vol. 52, No. 4 PART 1, 045601, 01.04.2013.

Research output: Contribution to journalArticle

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