We perform an improved method of thermodynamic analysis for semipolar (1122) and (1101) surfaces of GaN and AlN to elucidate the relationship between growth conditions and semipolar and polar surfaces during metalorganic vapor phase epitaxy (MOVPE). The calculations for H2 carrier gas suggest that for both GaN and AlN the maximum temperature for growth on (1122) surfaces is higher than that for growth on (0001) surfaces. On the other hand, the maximum temperature for growth on GaN(1101) surfaces is comparable to that for growth on GaN(0001) surfaces, while the maximum temperature for the growth on AlN(0001) surfaces is higher than that for growth on AlN(1101) surfaces. These results could be used to provide favorable conditions for growth of group-III nitrides along a semipolar orientation during MOVPE.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)