Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Koichi Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Shinichi Nishizawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Crystal growth of a certain polytype of SiC in a process of physical vapor transport was studied on the basis of classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model. Formation of a certain polytype in the nucleation stage is determined by the energy balance among surface energy, formation energy and supersaturation. The preferential growth condition of a certain polytype was estimated. The value of supersaturation was estimated using a numerical model obtained by a global model that includes species transport as well as heat transport in a furnace. The results of calculation showed that 4H polytype is more stable than 15R, 6H and 3C polytypes. Free energy difference between 4H and 6H polytypes decreased when total pressure in the furnace decreased.

Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalJournal of Crystal Growth
Volume324
Issue number1
DOIs
Publication statusPublished - Jun 1 2011

Fingerprint

Supersaturation
Furnaces
Nucleation
Vapors
Thermodynamics
vapors
supersaturation
thermodynamics
furnaces
Crystallization
Energy balance
Interfacial energy
Crystal growth
nucleation
Free energy
Numerical models
energy of formation
surface energy
crystal growth
free energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Thermodynamic analysis of SiC polytype growth by physical vapor transport method. / Kakimoto, Koichi; Gao, B.; Shiramomo, T.; Nakano, S.; Nishizawa, Shinichi.

In: Journal of Crystal Growth, Vol. 324, No. 1, 01.06.2011, p. 78-81.

Research output: Contribution to journalArticle

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