Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

Kawano Jun, Yoshihiro Kangawa, Ito Tomonori, Koichi Kakimoto, Koukitu Akinori

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalJournal of Crystal Growth
Volume343
Issue number1
DOIs
Publication statusPublished - Mar 15 2012

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Vapor phase epitaxy
pressure ratio
Gases
Thermodynamics
vapor phases
thermodynamics
Lattice mismatch
partial pressure
gases
Partial pressure
gas pressure
ammonia
Substrates
Ammonia
nitrogen
Nitrogen
Chemical analysis
arsine

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge. / Jun, Kawano; Kangawa, Yoshihiro; Tomonori, Ito; Kakimoto, Koichi; Akinori, Koukitu.

In: Journal of Crystal Growth, Vol. 343, No. 1, 15.03.2012, p. 105-109.

Research output: Contribution to journalArticle

Jun, Kawano ; Kangawa, Yoshihiro ; Tomonori, Ito ; Kakimoto, Koichi ; Akinori, Koukitu. / Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge. In: Journal of Crystal Growth. 2012 ; Vol. 343, No. 1. pp. 105-109.
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