Thermodynamic approach to InN epitaxy

Research output: Chapter in Book/Report/Conference proceedingChapter


In this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
PublisherSpringer Verlag
Number of pages14
Publication statusPublished - Jan 1 2018

Publication series

NameSpringer Series in Materials Science
ISSN (Print)0933-033X

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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  • Cite this

    Kangawa, Y. (2018). Thermodynamic approach to InN epitaxy. In Springer Series in Materials Science (pp. 95-108). (Springer Series in Materials Science; Vol. 269). Springer Verlag.