Thermodynamic approach to InN epitaxy

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
PublisherSpringer Verlag
Pages95-108
Number of pages14
DOIs
Publication statusPublished - Jan 1 2018

Publication series

NameSpringer Series in Materials Science
Volume269
ISSN (Print)0933-033X

Fingerprint

Epitaxial growth
Crystal orientation
Thermodynamics
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kangawa, Y. (2018). Thermodynamic approach to InN epitaxy. In Springer Series in Materials Science (pp. 95-108). (Springer Series in Materials Science; Vol. 269). Springer Verlag. https://doi.org/10.1007/978-3-319-76641-6_5

Thermodynamic approach to InN epitaxy. / Kangawa, Yoshihiro.

Springer Series in Materials Science. Springer Verlag, 2018. p. 95-108 (Springer Series in Materials Science; Vol. 269).

Research output: Chapter in Book/Report/Conference proceedingChapter

Kangawa, Y 2018, Thermodynamic approach to InN epitaxy. in Springer Series in Materials Science. Springer Series in Materials Science, vol. 269, Springer Verlag, pp. 95-108. https://doi.org/10.1007/978-3-319-76641-6_5
Kangawa Y. Thermodynamic approach to InN epitaxy. In Springer Series in Materials Science. Springer Verlag. 2018. p. 95-108. (Springer Series in Materials Science). https://doi.org/10.1007/978-3-319-76641-6_5
Kangawa, Yoshihiro. / Thermodynamic approach to InN epitaxy. Springer Series in Materials Science. Springer Verlag, 2018. pp. 95-108 (Springer Series in Materials Science).
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