Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

Original languageEnglish
Pages (from-to)1700-1703
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - Jul 31 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this