We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Jul 31 2006|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: Aug 28 2005 → Sept 2 2005
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics