Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN

Yoshihiro Kangawa; Koichi Kakimoto; Tomonori Ito; Akinori Koukitu

doi:10.1002/pssc.200565106

Thermodynamic stability of in_1-x-yGa_xAl_yN on GaN and InN

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In_1-x-yGa _xAl_yN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

Original language	English
Pages (from-to)	1700-1703
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565106
Publication status	Published - Jul 31 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sept 2 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200565106

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title = "Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN",

abstract = "We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.",

author = "Yoshihiro Kangawa and Koichi Kakimoto and Tomonori Ito and Akinori Koukitu",

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note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

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T1 - Thermodynamic stability of in1-x-yGaxAlyN on GaN and InN

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Ito, Tomonori

AU - Koukitu, Akinori

PY - 2006/7/31

Y1 - 2006/7/31

N2 - We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

AB - We studied the thermodynamic stability of InGaAlN alloy based on calculations of enthalpy of mixing using empirical interatomic potentials. We also investigated the influence of lattice constraint from the bottom layer, i.e., (0001)GaN or (0001)InN, on thermodynamic stability of InGaAlN thin films. The results suggest that the maximum point of enthalpy of mixing shifted toward the In-rich side in the case of InGaAlN/GaN and toward the In-poor side in the case of InGaAlN/InN compared with that of bulk In1-x-yGa xAlyN at x = 0, y = 0.5. This implies that lattice constraint from the bottom layer has a significant influence on thermodynamic stability of thin films.

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Thermodynamic stability of in_1-x-yGa_xAl_yN on GaN and InN

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