Thermodynamic stability of the spontaneous polarization and the space charge layer in ferroelectric/semiconductor heterostructures

Yukio Watanabe, Daisuke Sawamura

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The feasibility of memory retention of ferroelectric field-effect devices, their miniaturization limit and its dependence on their heterostructures are studied using the Ginzburg-Landau theory. For a ferroelectric directly formed on a semiconductor, the depolarization instability is shown to be negligible. To confirm the results, the depolarization instability is experimentally reexamined. For an insulating ferroelectric formed on a semiconductor via a thin insulator, the single-domain is destabilized, if there are no defects or traps. An appropriate number density of the interfacial traps stabilizes the spontaneous polarization only at one polarity. Alternatively, spontaneous polarization is stabilized by the semiconductivity of the ferroelectric. This changes the depolarization instability from destabilization of the ferroelectricity to reduction of the electric flux. Ferroelectric field-effect transistors (FETs) have the potential for miniaturization and long memory retention, although the switching speed may be intrinsically limited in conventional ferroelectric/insulator/semiconductor structures.

Original languageEnglish
Pages (from-to)6162-6166
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume36
Issue number9 SUPPL. B
Publication statusPublished - Sep 1997
Externally publishedYes

Fingerprint

Electric space charge
depolarization
Ferroelectric materials
Heterojunctions
space charge
Thermodynamic stability
miniaturization
Polarization
Semiconductor materials
thermodynamics
Depolarization
polarization
insulators
traps
ferroelectricity
destabilization
polarity
field effect transistors
Data storage equipment
Ferroelectricity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

@article{55e626b4ec884c92a6df890f3f0910c9,
title = "Thermodynamic stability of the spontaneous polarization and the space charge layer in ferroelectric/semiconductor heterostructures",
abstract = "The feasibility of memory retention of ferroelectric field-effect devices, their miniaturization limit and its dependence on their heterostructures are studied using the Ginzburg-Landau theory. For a ferroelectric directly formed on a semiconductor, the depolarization instability is shown to be negligible. To confirm the results, the depolarization instability is experimentally reexamined. For an insulating ferroelectric formed on a semiconductor via a thin insulator, the single-domain is destabilized, if there are no defects or traps. An appropriate number density of the interfacial traps stabilizes the spontaneous polarization only at one polarity. Alternatively, spontaneous polarization is stabilized by the semiconductivity of the ferroelectric. This changes the depolarization instability from destabilization of the ferroelectricity to reduction of the electric flux. Ferroelectric field-effect transistors (FETs) have the potential for miniaturization and long memory retention, although the switching speed may be intrinsically limited in conventional ferroelectric/insulator/semiconductor structures.",
author = "Yukio Watanabe and Daisuke Sawamura",
year = "1997",
month = "9",
language = "English",
volume = "36",
pages = "6162--6166",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 SUPPL. B",

}

TY - JOUR

T1 - Thermodynamic stability of the spontaneous polarization and the space charge layer in ferroelectric/semiconductor heterostructures

AU - Watanabe, Yukio

AU - Sawamura, Daisuke

PY - 1997/9

Y1 - 1997/9

N2 - The feasibility of memory retention of ferroelectric field-effect devices, their miniaturization limit and its dependence on their heterostructures are studied using the Ginzburg-Landau theory. For a ferroelectric directly formed on a semiconductor, the depolarization instability is shown to be negligible. To confirm the results, the depolarization instability is experimentally reexamined. For an insulating ferroelectric formed on a semiconductor via a thin insulator, the single-domain is destabilized, if there are no defects or traps. An appropriate number density of the interfacial traps stabilizes the spontaneous polarization only at one polarity. Alternatively, spontaneous polarization is stabilized by the semiconductivity of the ferroelectric. This changes the depolarization instability from destabilization of the ferroelectricity to reduction of the electric flux. Ferroelectric field-effect transistors (FETs) have the potential for miniaturization and long memory retention, although the switching speed may be intrinsically limited in conventional ferroelectric/insulator/semiconductor structures.

AB - The feasibility of memory retention of ferroelectric field-effect devices, their miniaturization limit and its dependence on their heterostructures are studied using the Ginzburg-Landau theory. For a ferroelectric directly formed on a semiconductor, the depolarization instability is shown to be negligible. To confirm the results, the depolarization instability is experimentally reexamined. For an insulating ferroelectric formed on a semiconductor via a thin insulator, the single-domain is destabilized, if there are no defects or traps. An appropriate number density of the interfacial traps stabilizes the spontaneous polarization only at one polarity. Alternatively, spontaneous polarization is stabilized by the semiconductivity of the ferroelectric. This changes the depolarization instability from destabilization of the ferroelectricity to reduction of the electric flux. Ferroelectric field-effect transistors (FETs) have the potential for miniaturization and long memory retention, although the switching speed may be intrinsically limited in conventional ferroelectric/insulator/semiconductor structures.

UR - http://www.scopus.com/inward/record.url?scp=0031221158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031221158&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031221158

VL - 36

SP - 6162

EP - 6166

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 SUPPL. B

ER -