Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This work thermodynamically and experimentally generalizes the interfacial SiO2 scavenging in HfO2 gate stacks from on Si to on other channel materials including SiGe and SiC and proposes a generalized formulation for this process. By paying attention to the Si chemical potential in the SiO2 interfacial layer (SiO2-IL) significantly affected by the substrate, it clarifies that Si in the substrate is indispensable to trigger the scavenging process. Thanks to this understanding, we demonstrate that the scavenging is extendable to next generation of channel materials containing Si such as SiGe and SiC with well-controlled high-k gate stacks. In addition, via formulating the diffusion-reaction-diffusion kinetics, an analytical relation like the Deal-Grove model is obtained for SiO2-IL scavenging in high-k gate stacks.

Original languageEnglish
Article number142903
JournalApplied Physics Letters
Volume110
Issue number14
DOIs
Publication statusPublished - Apr 3 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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