Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

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Physics & Astronomy