Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, K. Kakimoto

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Abstract

We studied dependence of process parameters, such as temperature of a seed, pressure in a furnace and surface polarity of a substrate, on polytypes of SiC in a process of physical vapor transport. The analysis was based on a classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model. We investigated which polytype was more stable in the nucleation stage by a comparison of nucleation energies of each polytype. The results show that the formation of 4H-SiC was more stable than that of 6H-SiC when we used C-face SiC as a seed. Furthermore, the most stable polytype could change from 4H-SiC to 6H-SiC in a condition of higher supersaturation, with a condition of higher temperature of a seed and lower pressure in a furnace. Meanwhile, the formation of 6H-SiC was more stable than 4H-SiC when Si-face of a seed was used.

Original languageEnglish
Pages (from-to)177-180
Number of pages4
JournalJournal of Crystal Growth
Volume352
Issue number1
DOIs
Publication statusPublished - Aug 1 2012

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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