Abstract
Micro-machined thermoelectric hydrogen sensors (micro-THS) with catalyst combustors were fabricated using Si and SiGe thin films prepared using the sputtering or chemical vapor deposition methods, and the relationship between the thermoelectric property of the films and the performance of the sensors were investigated. The Seebeck coefficients of the Si and SiGe films were evaluated as 107-246 and 82-126 uμV/K at temperatures of 50-480°C. The combustion heat estimated by increasing the temperature of the catalyst on the micro-THS with the Si thin film was 7-20% smaller than that of SiGe thin film. Moreover, the voltage signal of the micro-THS with the Si thin film was 8-13% larger than that of SiGe thin film. Both the Seebeck coefficient of the Si thin films and the voltage signal of the micro-THSs with the Si TE films were better than those of the SiGe thin film, although the combustion heat of the catalyst on the micro-THSs with the Si thin films was smaller compared to that with the SiGe thin film. For the micro sensor application using the thermoelectric thin film, the Seebeck coefficient is the most important factor to improve the sensor performance.
| Original language | English |
|---|---|
| Pages (from-to) | 188-192 |
| Number of pages | 5 |
| Journal | Journal of the Ceramic Society of Japan |
| Volume | 118 |
| Issue number | 1375 |
| DOIs | |
| Publication status | Published - Jan 1 2010 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
Cite this
Thermoelectric hydrogen sensors using Si and SiGe thin films with a catalytic combustor. / Nishibori, Maiko; Shin, Woosuck; Izu, Noriya; Itoh, Toshio; Matsubara, Ichiro; Watanabe, Nobuyuki; Kasuga, Toshihiro.
In: Journal of the Ceramic Society of Japan, Vol. 118, No. 1375, 01.01.2010, p. 188-192.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermoelectric hydrogen sensors using Si and SiGe thin films with a catalytic combustor
AU - Nishibori, Maiko
AU - Shin, Woosuck
AU - Izu, Noriya
AU - Itoh, Toshio
AU - Matsubara, Ichiro
AU - Watanabe, Nobuyuki
AU - Kasuga, Toshihiro
PY - 2010/1/1
Y1 - 2010/1/1
N2 - Micro-machined thermoelectric hydrogen sensors (micro-THS) with catalyst combustors were fabricated using Si and SiGe thin films prepared using the sputtering or chemical vapor deposition methods, and the relationship between the thermoelectric property of the films and the performance of the sensors were investigated. The Seebeck coefficients of the Si and SiGe films were evaluated as 107-246 and 82-126 uμV/K at temperatures of 50-480°C. The combustion heat estimated by increasing the temperature of the catalyst on the micro-THS with the Si thin film was 7-20% smaller than that of SiGe thin film. Moreover, the voltage signal of the micro-THS with the Si thin film was 8-13% larger than that of SiGe thin film. Both the Seebeck coefficient of the Si thin films and the voltage signal of the micro-THSs with the Si TE films were better than those of the SiGe thin film, although the combustion heat of the catalyst on the micro-THSs with the Si thin films was smaller compared to that with the SiGe thin film. For the micro sensor application using the thermoelectric thin film, the Seebeck coefficient is the most important factor to improve the sensor performance.
AB - Micro-machined thermoelectric hydrogen sensors (micro-THS) with catalyst combustors were fabricated using Si and SiGe thin films prepared using the sputtering or chemical vapor deposition methods, and the relationship between the thermoelectric property of the films and the performance of the sensors were investigated. The Seebeck coefficients of the Si and SiGe films were evaluated as 107-246 and 82-126 uμV/K at temperatures of 50-480°C. The combustion heat estimated by increasing the temperature of the catalyst on the micro-THS with the Si thin film was 7-20% smaller than that of SiGe thin film. Moreover, the voltage signal of the micro-THS with the Si thin film was 8-13% larger than that of SiGe thin film. Both the Seebeck coefficient of the Si thin films and the voltage signal of the micro-THSs with the Si TE films were better than those of the SiGe thin film, although the combustion heat of the catalyst on the micro-THSs with the Si thin films was smaller compared to that with the SiGe thin film. For the micro sensor application using the thermoelectric thin film, the Seebeck coefficient is the most important factor to improve the sensor performance.
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UR - http://www.scopus.com/inward/citedby.url?scp=77949525366&partnerID=8YFLogxK
U2 - 10.2109/jcersj2.118.188
DO - 10.2109/jcersj2.118.188
M3 - Article
AN - SCOPUS:77949525366
VL - 118
SP - 188
EP - 192
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 1375
ER -