Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion

Toshiki Tsubota, Michitaka Ohtaki, Koichi Eguchi, Hiromichi Arai

    Research output: Contribution to journalArticle

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    Abstract

    The thermoelectric properties of a mixed oxide (Zn1-xAlx)O (x = 0, 0.005, 0.01, 0.02, 0.05) are investigated in terms of materials for high-temperature thermoelectric conversion. The electrical conductivity, σ, of the oxide increases on Al-doping by more than three orders of magnitude up to ca. 103 S cm-1 at room temperature, showing metallic behaviour. The Seebeck coefficient, S, of (Zn1-xAlx)O (x > 0) shows a general trend in which the absolute value increases gradually from ca. -100 μV K-1 at room temperature to ca. -200 μV K-1 at 1000°C. As a consequence, the power factor, S2σ, reaches ca. 15 × 10-4 W m-1 K-2, the largest value of all reported oxide materials. The thermal conductivity, κ, of the oxide decreases with increasing temperature, owing to a decrease in the lattice thermal conductivity which is revealed to be dominant in the overall κ. In spite of the considerably large values of κ-, the figure of merit, Z = S2σ/κ, reaches 0.24 × 10-3 K-1 for (Zn0.98Al0.02)O at 1000°C. The extremely large power factor of (Zn1-xAlx)O compared to other metal oxides can be attributed to the high carrier mobility revealed by the Hall measurements, presumably resulting from a relatively covalent character of the Zn-O bond owing to a fairly small difference of the electronegativities of Zn and O. The dimensionless figure of merit, ZT, of 0.30 attained by (Zn0.98Al0.02)O at 1000°C demonstrates the potential usefulness of the oxide.

    Original languageEnglish
    Pages (from-to)85-90
    Number of pages6
    JournalJournal of Materials Chemistry
    Volume7
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 1997

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    Oxides
    Temperature
    Thermal conductivity
    Electronegativity
    Seebeck coefficient
    Carrier mobility
    Metals
    Doping (additives)

    All Science Journal Classification (ASJC) codes

    • Chemistry(all)
    • Materials Chemistry

    Cite this

    Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion. / Tsubota, Toshiki; Ohtaki, Michitaka; Eguchi, Koichi; Arai, Hiromichi.

    In: Journal of Materials Chemistry, Vol. 7, No. 1, 01.01.1997, p. 85-90.

    Research output: Contribution to journalArticle

    @article{c3a6b32aff8a45aab23dc99bb896b7d7,
    title = "Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion",
    abstract = "The thermoelectric properties of a mixed oxide (Zn1-xAlx)O (x = 0, 0.005, 0.01, 0.02, 0.05) are investigated in terms of materials for high-temperature thermoelectric conversion. The electrical conductivity, σ, of the oxide increases on Al-doping by more than three orders of magnitude up to ca. 103 S cm-1 at room temperature, showing metallic behaviour. The Seebeck coefficient, S, of (Zn1-xAlx)O (x > 0) shows a general trend in which the absolute value increases gradually from ca. -100 μV K-1 at room temperature to ca. -200 μV K-1 at 1000°C. As a consequence, the power factor, S2σ, reaches ca. 15 × 10-4 W m-1 K-2, the largest value of all reported oxide materials. The thermal conductivity, κ, of the oxide decreases with increasing temperature, owing to a decrease in the lattice thermal conductivity which is revealed to be dominant in the overall κ. In spite of the considerably large values of κ-, the figure of merit, Z = S2σ/κ, reaches 0.24 × 10-3 K-1 for (Zn0.98Al0.02)O at 1000°C. The extremely large power factor of (Zn1-xAlx)O compared to other metal oxides can be attributed to the high carrier mobility revealed by the Hall measurements, presumably resulting from a relatively covalent character of the Zn-O bond owing to a fairly small difference of the electronegativities of Zn and O. The dimensionless figure of merit, ZT, of 0.30 attained by (Zn0.98Al0.02)O at 1000°C demonstrates the potential usefulness of the oxide.",
    author = "Toshiki Tsubota and Michitaka Ohtaki and Koichi Eguchi and Hiromichi Arai",
    year = "1997",
    month = "1",
    day = "1",
    doi = "10.1039/a602506d",
    language = "English",
    volume = "7",
    pages = "85--90",
    journal = "Journal of Materials Chemistry",
    issn = "0959-9428",
    publisher = "Royal Society of Chemistry",
    number = "1",

    }

    TY - JOUR

    T1 - Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion

    AU - Tsubota, Toshiki

    AU - Ohtaki, Michitaka

    AU - Eguchi, Koichi

    AU - Arai, Hiromichi

    PY - 1997/1/1

    Y1 - 1997/1/1

    N2 - The thermoelectric properties of a mixed oxide (Zn1-xAlx)O (x = 0, 0.005, 0.01, 0.02, 0.05) are investigated in terms of materials for high-temperature thermoelectric conversion. The electrical conductivity, σ, of the oxide increases on Al-doping by more than three orders of magnitude up to ca. 103 S cm-1 at room temperature, showing metallic behaviour. The Seebeck coefficient, S, of (Zn1-xAlx)O (x > 0) shows a general trend in which the absolute value increases gradually from ca. -100 μV K-1 at room temperature to ca. -200 μV K-1 at 1000°C. As a consequence, the power factor, S2σ, reaches ca. 15 × 10-4 W m-1 K-2, the largest value of all reported oxide materials. The thermal conductivity, κ, of the oxide decreases with increasing temperature, owing to a decrease in the lattice thermal conductivity which is revealed to be dominant in the overall κ. In spite of the considerably large values of κ-, the figure of merit, Z = S2σ/κ, reaches 0.24 × 10-3 K-1 for (Zn0.98Al0.02)O at 1000°C. The extremely large power factor of (Zn1-xAlx)O compared to other metal oxides can be attributed to the high carrier mobility revealed by the Hall measurements, presumably resulting from a relatively covalent character of the Zn-O bond owing to a fairly small difference of the electronegativities of Zn and O. The dimensionless figure of merit, ZT, of 0.30 attained by (Zn0.98Al0.02)O at 1000°C demonstrates the potential usefulness of the oxide.

    AB - The thermoelectric properties of a mixed oxide (Zn1-xAlx)O (x = 0, 0.005, 0.01, 0.02, 0.05) are investigated in terms of materials for high-temperature thermoelectric conversion. The electrical conductivity, σ, of the oxide increases on Al-doping by more than three orders of magnitude up to ca. 103 S cm-1 at room temperature, showing metallic behaviour. The Seebeck coefficient, S, of (Zn1-xAlx)O (x > 0) shows a general trend in which the absolute value increases gradually from ca. -100 μV K-1 at room temperature to ca. -200 μV K-1 at 1000°C. As a consequence, the power factor, S2σ, reaches ca. 15 × 10-4 W m-1 K-2, the largest value of all reported oxide materials. The thermal conductivity, κ, of the oxide decreases with increasing temperature, owing to a decrease in the lattice thermal conductivity which is revealed to be dominant in the overall κ. In spite of the considerably large values of κ-, the figure of merit, Z = S2σ/κ, reaches 0.24 × 10-3 K-1 for (Zn0.98Al0.02)O at 1000°C. The extremely large power factor of (Zn1-xAlx)O compared to other metal oxides can be attributed to the high carrier mobility revealed by the Hall measurements, presumably resulting from a relatively covalent character of the Zn-O bond owing to a fairly small difference of the electronegativities of Zn and O. The dimensionless figure of merit, ZT, of 0.30 attained by (Zn0.98Al0.02)O at 1000°C demonstrates the potential usefulness of the oxide.

    UR - http://www.scopus.com/inward/record.url?scp=0002321379&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0002321379&partnerID=8YFLogxK

    U2 - 10.1039/a602506d

    DO - 10.1039/a602506d

    M3 - Article

    AN - SCOPUS:0002321379

    VL - 7

    SP - 85

    EP - 90

    JO - Journal of Materials Chemistry

    JF - Journal of Materials Chemistry

    SN - 0959-9428

    IS - 1

    ER -