In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K−2 m−1 was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry