Thermoelectric properties of n-type nanocrystalline bismuth-telluride-based thin films deposited by flash evaporation

The thermal conductivity of n-type nanocrystalline bismuth-telluride-based thin films (Bi_2.0Te_2.7Se_0.3) is investigated by a differential 3w method at room temperature. The nanocrystalline thin films are grown on a glass substrate by a flash evaporation method, followed by hydrogen annealing at 250°C. The structure of the thin films is studied by means of atomic force microscopy, x-ray diffraction, and energy-dispersive x-ray spectroscopy. The thin films exhibit an average grain size of 60 nm and a cross-plane thermal conductivity of 0.8 W/m K. The in-plane electrical conductivity and in-plane Seebeck coefficient are also investigated. Assuming that the in-plane thermal conductivity of the thin films is identical to that of the cross-plane direction, the in-plane figure of merit of the thin films is estimated to be ZT=0.7. As compared with a sintered bulk sample with average grain size of 30 μm and nearly the same composition as the thin films, the nanocrystalline thin films show approximately a 50% reduction in the thermal conductivity, but the electrical conductivity also falls 40%. The reduced thermal and electrical conductivities are attributed to increased carrier trapping and scattering in the nanocrystalline film.