TY - JOUR
T1 - Thermoelectric properties of selenospinel Cu 6Fe 4Sn 12Se 32
AU - Suekuni, Koichiro
AU - Kunii, Masaru
AU - Nishiate, Hirotaka
AU - Ohta, Michihiro
AU - Yamamoto, Atsushi
AU - Koyano, Mikio
N1 - Funding Information:
This work was financially supported by a Grant-in-Aid for Research Activity Start-up (Grant No. 22840021) from JSPS and Marubun Research Promotion Foundation, Japan.
PY - 2012/6
Y1 - 2012/6
N2 - This report describes thermoelectric properties up to 500 K for polycrystalline selenospinel Cu 6Fe 4Sn 12Se 32 samples. Thermal conductivity shows a low value of 1 W/Km because of their structural complexity such as Fe/Sn site disorder. Electrical resistivity ρ varies as exp(T 0/T 1/4) and thermopower S varies as T 1/2 at low temperatures, which indicates that Mott variable-range hopping is the dominant conduction mechanism. However, at high temperatures (above 350 K), ρ and S decrease simultaneously. The temperature dependences are attributed to the thermal excitation of electrons. The possible band structure for Cu 6Fe 4Sn 12Se 32 is examined to clarify the behavior of ρ and S.
AB - This report describes thermoelectric properties up to 500 K for polycrystalline selenospinel Cu 6Fe 4Sn 12Se 32 samples. Thermal conductivity shows a low value of 1 W/Km because of their structural complexity such as Fe/Sn site disorder. Electrical resistivity ρ varies as exp(T 0/T 1/4) and thermopower S varies as T 1/2 at low temperatures, which indicates that Mott variable-range hopping is the dominant conduction mechanism. However, at high temperatures (above 350 K), ρ and S decrease simultaneously. The temperature dependences are attributed to the thermal excitation of electrons. The possible band structure for Cu 6Fe 4Sn 12Se 32 is examined to clarify the behavior of ρ and S.
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U2 - 10.1007/s11664-011-1842-3
DO - 10.1007/s11664-011-1842-3
M3 - Article
AN - SCOPUS:84862202708
SN - 0361-5235
VL - 41
SP - 1130
EP - 1133
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 6
ER -