Thermoelectric properties of ZnO doped with the group 13 elements

Toshiki Tsubota; Michitaka Ohtaki; Koichi Eguchi; Hiromichi Arai

Thermoelectric properties of ZnO doped with the group 13 elements

Toshiki Tsubota, Michitaka Ohtaki, Koichi Eguchi, Hiromichi Arai

Research output: Contribution to conference › Paper › peer-review

Abstract

Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M ₂ O ₃ (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn _0.98 M _0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

Original language	English
Pages	240-243
Number of pages	4
Publication status	Published - Dec 1 1997
Event	Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger Duration: Aug 26 1997 → Aug 29 1997

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Other	Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
City	Dresden, Ger
Period	8/26/97 → 8/29/97

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "Thermoelectric properties of ZnO doped with the group 13 elements",

abstract = " Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity. ",

author = "Toshiki Tsubota and Michitaka Ohtaki and Koichi Eguchi and Hiromichi Arai",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "240--243",

note = "Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 ; Conference date: 26-08-1997 Through 29-08-1997",

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TY - CONF

T1 - Thermoelectric properties of ZnO doped with the group 13 elements

AU - Tsubota, Toshiki

AU - Ohtaki, Michitaka

AU - Eguchi, Koichi

AU - Arai, Hiromichi

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

AB - Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

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M3 - Paper

AN - SCOPUS:0031389051

SP - 240

EP - 243

T2 - Proceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97

Y2 - 26 August 1997 through 29 August 1997

ER -

Thermoelectric properties of ZnO doped with the group 13 elements

Abstract

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