Thermoelectric properties of ZnO doped with the group 13 elements

Toshiki Tsubota, Michitaka Ohtaki, Koichi Eguchi, Hiromichi Arai

    Research output: Contribution to conferencePaperpeer-review

    16 Citations (Scopus)

    Abstract

    Investigation on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M 2 O 3 (M = Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for the dopant with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly at the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn 0.98 M 0.02 )O (M = Ga or In) was equal to that of the Al-doped one up to ca. 600 °C, owing to the suppression of the thermal conductivity.

    Original languageEnglish
    Pages240-243
    Number of pages4
    Publication statusPublished - Dec 1 1997
    EventProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97 - Dresden, Ger
    Duration: Aug 26 1997Aug 29 1997

    Other

    OtherProceedings of the 1997 16th International Conference on Thermoelectrics, ICT'97
    CityDresden, Ger
    Period8/26/978/29/97

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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