Thick and large area PIN diodes for hard X-ray astronomy

N. Ota, T. Murakami, M. Sugizaki, M. Kaneda, T. Tamura, H. Ozawa, T. Kamae, K. Makishima, T. Takahashi, M. Tashiro, Y. Fukazawa, J. Kataoka, K. Yamaoka, S. Kubo, C. Tanihata, Y. Uchiyama, K. Matsuzaki, N. Iyomoto, M. Kokubun, T. NakazawaA. Kubota, T. Mizuno, Y. Matsumoto, N. Isobe, Y. Terada, M. Sugiho, T. Onishi, H. Kubo, H. Ikeda, M. Nomachi, T. Ohsugi, M. Muramatsu, H. Akahori

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Abstract

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume436
Issue number1-2
DOIs
Publication statusPublished - Oct 21 1999
Externally publishedYes
EventProceedings of the 1998 7th International Conference on Solid State Detectors - Nara, Jpn
Duration: Dec 4 1998Dec 6 1998

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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