Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator

T. Sadoh, H. Kanno, O. Nakano, A. Kenjo, M. Miyao

Research output: Contribution to conferencePaper

Abstract

The thickness dependent growth kinetics in Ni-mediated crystallization of a-SiGe on SiO2 has been investigated. The crystallized area consisted of dendrite and plane regions. The growth velocities of both regions increased with increasing thickness of the starting amorphous films, and the dendrite and plane growth lengths of 120 and 50 urn were obtained for the sample (film thickness: 100 nm) after annealing (550°C, 20 h). This dependence could be explained on the basis of the narrowing of the effective Ni channel in the grown c-SiGe regions with thinning deposited SiGe films. The control of the film thickness is important for optimization of Ni-mediated crystallization process of a-SiGe to realize high quality thin-film transistors.

Original languageEnglish
Pages143-147
Number of pages5
Publication statusPublished - Dec 1 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Sadoh, T., Kanno, H., Nakano, O., Kenjo, A., & Miyao, M. (2004). Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator. 143-147. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.