Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)

Ryo Matsumura; Masaya Sasaki; Hironori Chikita; Taizoh Sadoh; Masanobu Miyao

doi:10.1149/2.0021512ssl

Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)

Ryo Matsumura, Masaya Sasaki, Hironori Chikita, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Low-temperature (≤250°C) solid-phase crystallization of amorphous-GeSn films (Sn-concentration: 20%-30%, thickness: 30-100 nm) on insulating-substrates are investigated. As a result, we have realized high growth-rate (∼13 μm/h) for samples (film-thickness: 100 nm, initial Sn-concentration: 30%) at surprisingly low-temperature (150°C), which is very useful to realize flexible thin-film transistors. During this study, we encountered interesting phenomena that growth rates significantly decrease with decreasing filmthickness. In addition, substitutional Sn-concentrations in grown layers increased with decreasing film thickness. These phenomena are attributed to change in bond arrangement processes caused by interface. This technique is expected to facilitate next generation flexible thin-film transistors.

Original language	English
Pages (from-to)	P95-P97
Journal	ECS Solid State Letters
Volume	4
Issue number	12
DOIs	https://doi.org/10.1149/2.0021512ssl
Publication status	Published - Jan 1 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Matsumura, R., Sasaki, M., Chikita, H., Sadoh, T., & Miyao, M. (2015). Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C). ECS Solid State Letters, 4(12), P95-P97. https://doi.org/10.1149/2.0021512ssl

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AU - Miyao, Masanobu

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