TY - JOUR
T1 - Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)
AU - Matsumura, Ryo
AU - Sasaki, Masaya
AU - Chikita, Hironori
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Publisher Copyright:
© 2015 The Electrochemical Society. All rights reserved.
PY - 2015
Y1 - 2015
N2 - Low-temperature (≤250°C) solid-phase crystallization of amorphous-GeSn films (Sn-concentration: 20%-30%, thickness: 30-100 nm) on insulating-substrates are investigated. As a result, we have realized high growth-rate (∼13 μm/h) for samples (film-thickness: 100 nm, initial Sn-concentration: 30%) at surprisingly low-temperature (150°C), which is very useful to realize flexible thin-film transistors. During this study, we encountered interesting phenomena that growth rates significantly decrease with decreasing filmthickness. In addition, substitutional Sn-concentrations in grown layers increased with decreasing film thickness. These phenomena are attributed to change in bond arrangement processes caused by interface. This technique is expected to facilitate next generation flexible thin-film transistors.
AB - Low-temperature (≤250°C) solid-phase crystallization of amorphous-GeSn films (Sn-concentration: 20%-30%, thickness: 30-100 nm) on insulating-substrates are investigated. As a result, we have realized high growth-rate (∼13 μm/h) for samples (film-thickness: 100 nm, initial Sn-concentration: 30%) at surprisingly low-temperature (150°C), which is very useful to realize flexible thin-film transistors. During this study, we encountered interesting phenomena that growth rates significantly decrease with decreasing filmthickness. In addition, substitutional Sn-concentrations in grown layers increased with decreasing film thickness. These phenomena are attributed to change in bond arrangement processes caused by interface. This technique is expected to facilitate next generation flexible thin-film transistors.
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U2 - 10.1149/2.0021512ssl
DO - 10.1149/2.0021512ssl
M3 - Article
AN - SCOPUS:84947730396
VL - 4
SP - P95-P97
JO - ECS Solid State Letters
JF - ECS Solid State Letters
SN - 2162-8742
IS - 12
ER -