Thickness-dependent stress-relaxation in thin SGOI structures and its improvement

Masanori Tanaka; Isao Tsunoda; Taizoh Sadoh; Toyotsugu Enokida; Masaharu Ninomiya; Masahiko Nakamae; Masanobu Miyao

doi:10.1016/j.tsf.2005.07.316

Thickness-dependent stress-relaxation in thin SGOI structures and its improvement

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H⁺ irradiation with a medium dose (5 × 10¹⁵ cm^{- 2}) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 10⁶ cm^{- 2}) has been realized by this technique.

Original language	English
Pages (from-to)	247-250
Number of pages	4
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.316
Publication status	Published - Jun 5 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Thickness-dependent stress-relaxation in thin SGOI structures and its improvement",

abstract = "The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm- 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 106 cm- 2) has been realized by this technique.",

author = "Masanori Tanaka and Isao Tsunoda and Taizoh Sadoh and Toyotsugu Enokida and Masaharu Ninomiya and Masahiko Nakamae and Masanobu Miyao",

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AU - Tanaka, Masanori

AU - Tsunoda, Isao

AU - Sadoh, Taizoh

AU - Enokida, Toyotsugu

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Miyao, Masanobu

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AB - The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm- 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 106 cm- 2) has been realized by this technique.

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