Thickness-dependent stress-relaxation in thin SGOI structures and its improvement

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm- 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 106 cm- 2) has been realized by this technique.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2006

Fingerprint

Defect density
stress relaxation
Stress relaxation
Dosimetry
Condensation
insulators
Irradiation
Annealing
Oxidation
condensation
dosage
oxidation
irradiation
annealing
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Tanaka, M., Tsunoda, I., Sadoh, T., Enokida, T., Ninomiya, M., Nakamae, M., & Miyao, M. (2006). Thickness-dependent stress-relaxation in thin SGOI structures and its improvement. Thin Solid Films, 508(1-2), 247-250. https://doi.org/10.1016/j.tsf.2005.07.316

Thickness-dependent stress-relaxation in thin SGOI structures and its improvement. / Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh; Enokida, Toyotsugu; Ninomiya, Masaharu; Nakamae, Masahiko; Miyao, Masanobu.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 247-250.

Research output: Contribution to journal › Article

Tanaka, M, Tsunoda, I, Sadoh, T, Enokida, T, Ninomiya, M, Nakamae, M & Miyao, M 2006, 'Thickness-dependent stress-relaxation in thin SGOI structures and its improvement', Thin Solid Films, vol. 508, no. 1-2, pp. 247-250. https://doi.org/10.1016/j.tsf.2005.07.316
Tanaka M, Tsunoda I, Sadoh T, Enokida T, Ninomiya M, Nakamae M et al. Thickness-dependent stress-relaxation in thin SGOI structures and its improvement. Thin Solid Films. 2006 Jun 5;508(1-2):247-250. https://doi.org/10.1016/j.tsf.2005.07.316
Tanaka, Masanori ; Tsunoda, Isao ; Sadoh, Taizoh ; Enokida, Toyotsugu ; Ninomiya, Masaharu ; Nakamae, Masahiko ; Miyao, Masanobu. / Thickness-dependent stress-relaxation in thin SGOI structures and its improvement. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 247-250.
@article{d2b76776b95f4cf282c37b8ff87f7681,
title = "Thickness-dependent stress-relaxation in thin SGOI structures and its improvement",
abstract = "The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm- 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70{\%}) ultra-thin SGOI with a low defect density (8 × 106 cm- 2) has been realized by this technique.",
author = "Masanori Tanaka and Isao Tsunoda and Taizoh Sadoh and Toyotsugu Enokida and Masaharu Ninomiya and Masahiko Nakamae and Masanobu Miyao",
year = "2006",
month = "6",
day = "5",
doi = "10.1016/j.tsf.2005.07.316",
language = "English",
volume = "508",
pages = "247--250",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Thickness-dependent stress-relaxation in thin SGOI structures and its improvement

AU - Tanaka, Masanori

AU - Tsunoda, Isao

AU - Sadoh, Taizoh

AU - Enokida, Toyotsugu

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Miyao, Masanobu

PY - 2006/6/5

Y1 - 2006/6/5

N2 - The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm- 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 106 cm- 2) has been realized by this technique.

AB - The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm- 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 106 cm- 2) has been realized by this technique.

UR - http://www.scopus.com/inward/record.url?scp=33646084380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646084380&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.07.316

DO - 10.1016/j.tsf.2005.07.316

M3 - Article

AN - SCOPUS:33646084380

VL - 508

SP - 247

EP - 250

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

Access to Document