Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C)

Takayuki Sugino; Kenta Moto; Hiroshi Ikenoue; Masanobu Miyao; Taizoh Sadoh

Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C)

Takayuki Sugino, Kenta Moto, Hiroshi Ikenoue, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.

Original language	English
Title of host publication	AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	241-243
Number of pages	3
ISBN (Electronic)	9784990875336
Publication status	Published - Aug 8 2017
Event	24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan Duration: Jul 4 2017 → Jul 7 2017

Other

Other	24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Country	Japan
City	Kyoto
Period	7/4/17 → 7/7/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computational Theory and Mathematics

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Sugino, T., Moto, K., Ikenoue, H., Miyao, M., & Sadoh, T. (2017). Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C). In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 241-243). [8006137] Institute of Electrical and Electronics Engineers Inc..

Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C). / Sugino, Takayuki; Moto, Kenta; Ikenoue, Hiroshi; Miyao, Masanobu; Sadoh, Taizoh.

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 241-243 8006137.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugino, T, Moto, K, Ikenoue, H, Miyao, M & Sadoh, T 2017, Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C). in AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8006137, Institute of Electrical and Electronics Engineers Inc., pp. 241-243, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017, Kyoto, Japan, 7/4/17.

Sugino T, Moto K, Ikenoue H, Miyao M, Sadoh T. Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C). In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 241-243. 8006137

Sugino, Takayuki ; Moto, Kenta ; Ikenoue, Hiroshi ; Miyao, Masanobu ; Sadoh, Taizoh. / Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C). AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 241-243

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abstract = "Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.",

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AB - Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.

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