Abstract
Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.
| Original language | English |
|---|---|
| Title of host publication | AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices |
| Subtitle of host publication | TFT Technologies and FPD Materials, Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 241-243 |
| Number of pages | 3 |
| ISBN (Electronic) | 9784990875336 |
| Publication status | Published - Aug 8 2017 |
| Event | 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan Duration: Jul 4 2017 → Jul 7 2017 |
Other
| Other | 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 7/4/17 → 7/7/17 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Computational Theory and Mathematics
Cite this
Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C). / Sugino, Takayuki; Moto, Kenta; Ikenoue, Hiroshi; Miyao, Masanobu; Sadoh, Taizoh.
AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 241-243 8006137.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C)
AU - Sugino, Takayuki
AU - Moto, Kenta
AU - Ikenoue, Hiroshi
AU - Miyao, Masanobu
AU - Sadoh, Taizoh
PY - 2017/8/8
Y1 - 2017/8/8
N2 - Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.
AB - Effects of film-Thickness on substitutional Sn concentration in GeSn films on insulator grown by combination of laser irradiation and subsequent thermal annealing are investigated. Here, the laser fluence is chosen as weak, which is below the critical fluence for crystallization of GeSn. It is clarified that for samples irradiated with low fluence, complete crystallization of a-Ge0.8Sn0.2 films (thickness: 50200 nm) is achieved by subsequent thermal annealing at 180°C for 5 h without incubation time. The substitutional Sn concentrations increase with decreasing film thickness. As a result, very high substitutional Sn concentration of ∼15%, which corresponds to high-substitution fraction of ∼75% of total Sn atoms, is achieved for film thickness of 50 nm. This technique will be useful to realize next-generation high performance devices on flexible insulating substrates.
UR - http://www.scopus.com/inward/record.url?scp=85034426563&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85034426563&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85034426563
SP - 241
EP - 243
BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
ER -