Thickness tuned two-dimensional superconductor-insulator transitions for amorphous ultra-thin films

K. Makise, K. Mithuishi, K. Furuya, A. Hirakawa, Hiizu Nakanishi, T. Kawaguti, B. Shinozaki

Research output: Contribution to journalArticle

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Abstract

We have carried out experiments of the thickness-tuned Superconductor- insulator (S-I) transition for amorphous ultra-thin films of various materials. The S-I transition in two-dimensional homogeneous systems has been studied using a wide variety of amorphous films, such as films quench-condensed onto cryogenic substrates and composite material films. The values of critical sheet resistance Rc obtained by many groups for homogeneous films of various materials do not indicate a universal value. Our results indicate that the Rc of Bi, MoRu and AuGe on SiO underlayers have approximately 5.2, 6.7 and 4.9 k Ω respectively. The difference among the values of Rc of the present three films is small in comparison with previous reports of other groups. The decrease in superconducting transition temperature of Bi, MoRu and AuGe films showed similar dependence of normal state sheet resistance below 2kΩ. This behavior can be theoretically explained by the electron-electron effect due to the enhanced Coulomb interactions in a disordered superconductor. On the insulating side, the conductance of the films exhibits temperature dependence as R = Ro exp[(T0/T) x]. The factor x of Bi films have ∼ 1 and that of MoRu and AuGe films are ∼ 0.5 near the S-I transition. This results may reflect the difference of films structure.

Original languageEnglish
Article number052148
JournalJournal of Physics: Conference Series
Volume150
Issue number5
DOIs
Publication statusPublished - Jan 1 2009

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insulators
thin films
cryogenics
electrons
transition temperature
temperature dependence
composite materials

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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Thickness tuned two-dimensional superconductor-insulator transitions for amorphous ultra-thin films. / Makise, K.; Mithuishi, K.; Furuya, K.; Hirakawa, A.; Nakanishi, Hiizu; Kawaguti, T.; Shinozaki, B.

In: Journal of Physics: Conference Series, Vol. 150, No. 5, 052148, 01.01.2009.

Research output: Contribution to journalArticle

Makise, K. ; Mithuishi, K. ; Furuya, K. ; Hirakawa, A. ; Nakanishi, Hiizu ; Kawaguti, T. ; Shinozaki, B. / Thickness tuned two-dimensional superconductor-insulator transitions for amorphous ultra-thin films. In: Journal of Physics: Conference Series. 2009 ; Vol. 150, No. 5.
@article{1e64407b2da44e038aef98ea21d8eed2,
title = "Thickness tuned two-dimensional superconductor-insulator transitions for amorphous ultra-thin films",
abstract = "We have carried out experiments of the thickness-tuned Superconductor- insulator (S-I) transition for amorphous ultra-thin films of various materials. The S-I transition in two-dimensional homogeneous systems has been studied using a wide variety of amorphous films, such as films quench-condensed onto cryogenic substrates and composite material films. The values of critical sheet resistance Rc obtained by many groups for homogeneous films of various materials do not indicate a universal value. Our results indicate that the Rc of Bi, MoRu and AuGe on SiO underlayers have approximately 5.2, 6.7 and 4.9 k Ω respectively. The difference among the values of Rc of the present three films is small in comparison with previous reports of other groups. The decrease in superconducting transition temperature of Bi, MoRu and AuGe films showed similar dependence of normal state sheet resistance below 2kΩ. This behavior can be theoretically explained by the electron-electron effect due to the enhanced Coulomb interactions in a disordered superconductor. On the insulating side, the conductance of the films exhibits temperature dependence as R = Ro exp[(T0/T) x]. The factor x of Bi films have ∼ 1 and that of MoRu and AuGe films are ∼ 0.5 near the S-I transition. This results may reflect the difference of films structure.",
author = "K. Makise and K. Mithuishi and K. Furuya and A. Hirakawa and Hiizu Nakanishi and T. Kawaguti and B. Shinozaki",
year = "2009",
month = "1",
day = "1",
doi = "10.1088/1742-6596/150/5/052148",
language = "English",
volume = "150",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Thickness tuned two-dimensional superconductor-insulator transitions for amorphous ultra-thin films

AU - Makise, K.

AU - Mithuishi, K.

AU - Furuya, K.

AU - Hirakawa, A.

AU - Nakanishi, Hiizu

AU - Kawaguti, T.

AU - Shinozaki, B.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We have carried out experiments of the thickness-tuned Superconductor- insulator (S-I) transition for amorphous ultra-thin films of various materials. The S-I transition in two-dimensional homogeneous systems has been studied using a wide variety of amorphous films, such as films quench-condensed onto cryogenic substrates and composite material films. The values of critical sheet resistance Rc obtained by many groups for homogeneous films of various materials do not indicate a universal value. Our results indicate that the Rc of Bi, MoRu and AuGe on SiO underlayers have approximately 5.2, 6.7 and 4.9 k Ω respectively. The difference among the values of Rc of the present three films is small in comparison with previous reports of other groups. The decrease in superconducting transition temperature of Bi, MoRu and AuGe films showed similar dependence of normal state sheet resistance below 2kΩ. This behavior can be theoretically explained by the electron-electron effect due to the enhanced Coulomb interactions in a disordered superconductor. On the insulating side, the conductance of the films exhibits temperature dependence as R = Ro exp[(T0/T) x]. The factor x of Bi films have ∼ 1 and that of MoRu and AuGe films are ∼ 0.5 near the S-I transition. This results may reflect the difference of films structure.

AB - We have carried out experiments of the thickness-tuned Superconductor- insulator (S-I) transition for amorphous ultra-thin films of various materials. The S-I transition in two-dimensional homogeneous systems has been studied using a wide variety of amorphous films, such as films quench-condensed onto cryogenic substrates and composite material films. The values of critical sheet resistance Rc obtained by many groups for homogeneous films of various materials do not indicate a universal value. Our results indicate that the Rc of Bi, MoRu and AuGe on SiO underlayers have approximately 5.2, 6.7 and 4.9 k Ω respectively. The difference among the values of Rc of the present three films is small in comparison with previous reports of other groups. The decrease in superconducting transition temperature of Bi, MoRu and AuGe films showed similar dependence of normal state sheet resistance below 2kΩ. This behavior can be theoretically explained by the electron-electron effect due to the enhanced Coulomb interactions in a disordered superconductor. On the insulating side, the conductance of the films exhibits temperature dependence as R = Ro exp[(T0/T) x]. The factor x of Bi films have ∼ 1 and that of MoRu and AuGe films are ∼ 0.5 near the S-I transition. This results may reflect the difference of films structure.

UR - http://www.scopus.com/inward/record.url?scp=77952523877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952523877&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/150/5/052148

DO - 10.1088/1742-6596/150/5/052148

M3 - Article

AN - SCOPUS:77952523877

VL - 150

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 5

M1 - 052148

ER -