Thin-layer ablation of metals and silicon by femtosecond laser pulses for application to surface analysis

Min Kyu Kim, Takayuki Takao, Yuji Oki, Mitsuo Maeda

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

For the purpose of thin-layer surface analysis, comparison of laser ablation by 24 ns ArF laser pulses at 193 nm and that by 150 fs Ti:sapphire laser pulses at 780 nm for samples ranging from metals to semiconductors is reported. In contrast to nanosecond laser pulses, the ablation threshold for femtosecond laser pulses could be reduced significantly. In particular, the threshold for a Si sample was reduced to about one order of magnitude, and an ablation rate of 0.48 nm/shot was obtained at 5% above the threshold fluence. The root-mean-square (RMS) growth rate in the roughness of the ablated surface was 0.05 nm/shot. These results show the advantages of femtosecond laser ablation for trace element analysis of a wide range of materials, coupled with laser-induced fluorescence (LIF) spectroscopy.

Original languageEnglish
Pages (from-to)6277-6280
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume39
Issue number11
Publication statusPublished - Nov 2000

Fingerprint

Surface analysis
Ablation
Ultrashort pulses
ablation
Laser pulses
Laser ablation
Silicon
silicon
pulses
Metals
metals
laser ablation
shot
lasers
thresholds
Fluorescence spectroscopy
Trace elements
Sapphire
Surface roughness
trace elements

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Thin-layer ablation of metals and silicon by femtosecond laser pulses for application to surface analysis. / Kim, Min Kyu; Takao, Takayuki; Oki, Yuji; Maeda, Mitsuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 39, No. 11, 11.2000, p. 6277-6280.

Research output: Contribution to journalArticle

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