For the purpose of thin-layer surface analysis, comparison of laser ablation by 24 ns ArF laser pulses at 193 nm and that by 150 fs Ti:sapphire laser pulses at 780 nm for samples ranging from metals to semiconductors is reported. In contrast to nanosecond laser pulses, the ablation threshold for femtosecond laser pulses could be reduced significantly. In particular, the threshold for a Si sample was reduced to about one order of magnitude, and an ablation rate of 0.48 nm/shot was obtained at 5% above the threshold fluence. The root-mean-square (RMS) growth rate in the roughness of the ablated surface was 0.05 nm/shot. These results show the advantages of femtosecond laser ablation for trace element analysis of a wide range of materials, coupled with laser-induced fluorescence (LIF) spectroscopy.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - Nov 2000|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)