Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

B. Gao; S. Nakano; H. Harada; Y. Miyamura; K. Kakimoto

doi:10.1016/j.jcrysgro.2016.12.059

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

Original language	English
Pages (from-to)	121-129
Number of pages	9
Journal	Journal of Crystal Growth
Volume	474
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.12.059
Publication status	Published - Sep 15 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2016.12.059

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title = "Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations",

abstract = "We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.",

author = "B. Gao and S. Nakano and H. Harada and Y. Miyamura and K. Kakimoto",

note = "Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).",

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T1 - Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

AU - Gao, B.

AU - Nakano, S.

AU - Harada, H.

AU - Miyamura, Y.

AU - Kakimoto, K.

N1 - Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).

PY - 2017/9/15

Y1 - 2017/9/15

N2 - We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

AB - We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

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