Abstract
We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.
| Original language | English |
|---|---|
| Pages (from-to) | 121-129 |
| Number of pages | 9 |
| Journal | Journal of Crystal Growth |
| Volume | 474 |
| DOIs | |
| Publication status | Published - Sep 15 2017 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations. / Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, Koichi.
In: Journal of Crystal Growth, Vol. 474, 15.09.2017, p. 121-129.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations
AU - Gao, B.
AU - Nakano, S.
AU - Harada, H.
AU - Miyamura, Y.
AU - Kakimoto, Koichi
PY - 2017/9/15
Y1 - 2017/9/15
N2 - We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.
AB - We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.
UR - http://www.scopus.com/inward/record.url?scp=85008156695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85008156695&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2016.12.059
DO - 10.1016/j.jcrysgro.2016.12.059
M3 - Article
VL - 474
SP - 121
EP - 129
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -