Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

B. Gao, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)


We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

Original languageEnglish
Pages (from-to)121-129
Number of pages9
JournalJournal of Crystal Growth
Publication statusPublished - Sep 15 2017


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this