Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

B. Gao, S. Nakano, H. Harada, Y. Miyamura, Koichi Kakimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

Original languageEnglish
Pages (from-to)121-129
Number of pages9
JournalJournal of Crystal Growth
Volume474
DOIs
Publication statusPublished - Sep 15 2017

Fingerprint

dimensional analysis
Silicon
multiplication
Crystal orientation
Dislocations (crystals)
silicon
histories
Single crystals
single crystals
crystal lattices
Crystal lattices
furnaces
Furnaces
Anisotropy
Cooling
cooling
Temperature
anisotropy
temperature
crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations. / Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 474, 15.09.2017, p. 121-129.

Research output: Contribution to journalArticle

@article{7c745fd03c154a2780f71b102b5878a8,
title = "Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations",
abstract = "We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.",
author = "B. Gao and S. Nakano and H. Harada and Y. Miyamura and Koichi Kakimoto",
year = "2017",
month = "9",
day = "15",
doi = "10.1016/j.jcrysgro.2016.12.059",
language = "English",
volume = "474",
pages = "121--129",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

AU - Gao, B.

AU - Nakano, S.

AU - Harada, H.

AU - Miyamura, Y.

AU - Kakimoto, Koichi

PY - 2017/9/15

Y1 - 2017/9/15

N2 - We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

AB - We used an advanced 3D model to study the effect of crystal orientation on the dislocation multiplication in single-crystal silicon under accurate control of the cooling history of temperature. The incorporation of the anisotropy effect of the crystal lattice into the model has been explained in detail, and an algorithm for accurate control of the temperature in the furnace has also been presented. This solver can dynamically track the history of dislocation generation for different orientations during thermal processing of single-crystal silicon. Four orientations, [001], [110], [111], and [112], have been examined, and the comparison of dislocation distributions has been provided.

UR - http://www.scopus.com/inward/record.url?scp=85008156695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008156695&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.12.059

DO - 10.1016/j.jcrysgro.2016.12.059

M3 - Article

VL - 474

SP - 121

EP - 129

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -