Dislocation multiplication in single-crystal silicon during heating and cooling processes was studied by three-dimensional simulation under accurate control of the temperature history. Three different cooling temperature histories were designed. The results showed that the cooling rate in the high-temperature region has a large effect on the final dislocations and residual stress. The most effective method to reduce dislocations is to use a slow cooling rate in the high-temperature region.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry