Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature

B. Gao, K. Kakimoto

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Dislocation multiplication in single-crystal silicon during heating and cooling processes was studied by three-dimensional simulation under accurate control of the temperature history. Three different cooling temperature histories were designed. The results showed that the cooling rate in the high-temperature region has a large effect on the final dislocations and residual stress. The most effective method to reduce dislocations is to use a slow cooling rate in the high-temperature region.

Original languageEnglish
Pages (from-to)7-13
Number of pages7
JournalJournal of Crystal Growth
Volume396
DOIs
Publication statusPublished - Jun 15 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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