Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible

Xuejiang Chen, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A three-dimensional global model was used to obtain the solution of a thermal field within the entire furnace during a unidirectional solidification process of multicrystalline silicon with a square crucible. Then the thermal stress distribution in the silicon ingot was solved. Based on the solution of thermal stress, relaxation of stress and multiplication of dislocations were performed by using the HaasenAlexanderSumino model (HAS model). The influence of crucible constraint on stress levels and dislocations was investigated. It was found that the crucible constraint had significant influence on the thermal stresses and dislocations in the ingot. The results indicated that it is important to reduce the crucible constraint in order to relax thermal stresses and reduce dislocations in a silicon ingot during the solidification process.

Original languageEnglish
Pages (from-to)3261-3266
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number22
DOIs
Publication statusPublished - Nov 1 2010

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Crucibles
ingots
Silicon
crucibles
Ingots
thermal stresses
Thermal stress
solidification
Solidification
silicon
stress relaxation
Stress relaxation
multiplication
stress distribution
furnaces
Stress concentration
Furnaces

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible. / Chen, Xuejiang; Nakano, Satoshi; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 312, No. 22, 01.11.2010, p. 3261-3266.

Research output: Contribution to journalArticle

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