TY - GEN
T1 - Three-dimensional integration of optical multi-chips using surface-activated bonding for high-density microsystems packaging
AU - Higurashi, Eiji
AU - Chino, Daisuke
AU - Suga, Tadatomo
AU - Sawada, Renshi
PY - 2008/10/23
Y1 - 2008/10/23
N2 - The hybrid integration of multiple chips in three dimensions is an important technology for realizing highly functional, compact optoelectronic microsystems. In this study, three-dimensional integration of optical chips was successfully performed using Au-Au surface-activated bonding (bonding temperature: 150 °C). The fabricated microsystem consists of two elements: i) a micromachined silicon optical bench incorporating a bonded laser diode, micromirrors, and through-hole electrodes; and ii) a glass substrate incorporating bonded photodiodes, electrical interconnections, and refractive microlenses. The silicon optical bench and the glass substrate were vertically stacked by surface-activated bonding. The size of the fully integrated microsystem is only 2.6 mm × 2.6 mm × 1 mm thick. The design and fabrication process allow chip-scale and wafer-level packaging. In addition, application for laser Doppler velocimeter sensor is discussed.
AB - The hybrid integration of multiple chips in three dimensions is an important technology for realizing highly functional, compact optoelectronic microsystems. In this study, three-dimensional integration of optical chips was successfully performed using Au-Au surface-activated bonding (bonding temperature: 150 °C). The fabricated microsystem consists of two elements: i) a micromachined silicon optical bench incorporating a bonded laser diode, micromirrors, and through-hole electrodes; and ii) a glass substrate incorporating bonded photodiodes, electrical interconnections, and refractive microlenses. The silicon optical bench and the glass substrate were vertically stacked by surface-activated bonding. The size of the fully integrated microsystem is only 2.6 mm × 2.6 mm × 1 mm thick. The design and fabrication process allow chip-scale and wafer-level packaging. In addition, application for laser Doppler velocimeter sensor is discussed.
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U2 - 10.1109/OMEMS.2008.4607829
DO - 10.1109/OMEMS.2008.4607829
M3 - Conference contribution
AN - SCOPUS:54049136149
SN - 9781424419180
T3 - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
SP - 62
EP - 63
BT - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
T2 - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
Y2 - 11 August 2008 through 14 August 2008
ER -