Three-dimensional observation of dislocations by electron tomography in a silicon crystal

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Abstract

Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

Original languageEnglish
Pages (from-to)1953-1956
Number of pages4
JournalMaterials Transactions
Volume49
Issue number9
DOIs
Publication statusPublished - Sep 1 2008

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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