Three-dimensional observation of dislocations by electron tomography in a silicon crystal

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

Original languageEnglish
Pages (from-to)1953-1956
Number of pages4
JournalMaterials Transactions
Volume49
Issue number9
DOIs
Publication statusPublished - Sep 1 2008

Fingerprint

Silicon
Dislocations (crystals)
Tomography
tomography
Single crystals
Crystals
Electrons
silicon
crystals
electrons
Diffraction
Transmission electron microscopy
Scanning electron microscopy
single crystals
holders
acquisition
adjusting
wafers
Temperature
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Three-dimensional observation of dislocations by electron tomography in a silicon crystal. / Tanaka, Masaki; Honda, Masaki; Mitsuhara, Masatoshi; Hata, Satoshi; Kaneko, Kenji; Higashida, Kenji.

In: Materials Transactions, Vol. 49, No. 9, 01.09.2008, p. 1953-1956.

Research output: Contribution to journalArticle

@article{8cde9618a2ed43ecaca77f20cb16a352,
title = "Three-dimensional observation of dislocations by electron tomography in a silicon crystal",
abstract = "Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.",
author = "Masaki Tanaka and Masaki Honda and Masatoshi Mitsuhara and Satoshi Hata and Kenji Kaneko and Kenji Higashida",
year = "2008",
month = "9",
day = "1",
doi = "10.2320/matertrans.MAW200828",
language = "English",
volume = "49",
pages = "1953--1956",
journal = "Materials Transactions",
issn = "0916-1821",
publisher = "The Japan Institute of Metals and Materials",
number = "9",

}

TY - JOUR

T1 - Three-dimensional observation of dislocations by electron tomography in a silicon crystal

AU - Tanaka, Masaki

AU - Honda, Masaki

AU - Mitsuhara, Masatoshi

AU - Hata, Satoshi

AU - Kaneko, Kenji

AU - Higashida, Kenji

PY - 2008/9/1

Y1 - 2008/9/1

N2 - Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

AB - Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

UR - http://www.scopus.com/inward/record.url?scp=54549114393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54549114393&partnerID=8YFLogxK

U2 - 10.2320/matertrans.MAW200828

DO - 10.2320/matertrans.MAW200828

M3 - Article

VL - 49

SP - 1953

EP - 1956

JO - Materials Transactions

JF - Materials Transactions

SN - 0916-1821

IS - 9

ER -