Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Takuro Naramura; Masafumi Inaba; Sho Mizuno; Keisuke Igarashi; Eriko Kida; Shaili Falina Mohd Sukri; Yukihiro Shintani; Hiroshi Kawarada

doi:10.1063/1.4991364

Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Takuro Naramura, Masafumi Inaba, Sho Mizuno, Keisuke Igarashi, Eriko Kida, Shaili Falina Mohd Sukri, Yukihiro Shintani, Hiroshi Kawarada

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (V_AO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.

Original language	English
Article number	013505
Journal	Applied Physics Letters
Volume	111
Issue number	1
DOIs	https://doi.org/10.1063/1.4991364
Publication status	Published - Jul 3 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4991364

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title = "Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation",

abstract = "Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.",

author = "Takuro Naramura and Masafumi Inaba and Sho Mizuno and Keisuke Igarashi and Eriko Kida and {Mohd Sukri}, {Shaili Falina} and Yukihiro Shintani and Hiroshi Kawarada",

note = "Funding Information: This study was supported by Japan Science and Technology Agency (Adaptable and Seamless Technology Transfer Program through Target-driven R&D) and a Grant-in-Aid for fundamental research S (26220903, JSPS) from the Japan Society for the Promotion of Science. We appreciate the Institute for Nanoscience and Nanotechnology in Waseda University for the use of their equipment Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jul,

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doi = "10.1063/1.4991364",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

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T1 - Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

AU - Naramura, Takuro

AU - Inaba, Masafumi

AU - Mizuno, Sho

AU - Igarashi, Keisuke

AU - Kida, Eriko

AU - Mohd Sukri, Shaili Falina

AU - Shintani, Yukihiro

AU - Kawarada, Hiroshi

N1 - Funding Information: This study was supported by Japan Science and Technology Agency (Adaptable and Seamless Technology Transfer Program through Target-driven R&D) and a Grant-in-Aid for fundamental research S (26220903, JSPS) from the Japan Society for the Promotion of Science. We appreciate the Institute for Nanoscience and Nanotechnology in Waseda University for the use of their equipment Publisher Copyright: © 2017 Author(s).

PY - 2017/7/3

Y1 - 2017/7/3

N2 - Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.

AB - Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013505

ER -

Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

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