Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films

Hiroshi Uchida, Seiichiro Koda, Hirofumi Matsuda, Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journalConference article

Abstract

Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) 4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50) 1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Original languageEnglish
Pages (from-to)207-212
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume784
Publication statusPublished - Dec 1 2003
Externally publishedYes
EventFerroelectric Thin Films XII - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

Fingerprint

titanate
bismuth
Bismuth
Ferroelectric materials
Cations
substitution
Substitution reactions
cation
Positive ions
Thin films
Neodymium
neodymium
Ferroelectric thin films
Remanence
fatigue
Electric space charge
Leakage currents
leakage
Durability
polarization

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films. / Uchida, Hiroshi; Koda, Seiichiro; Matsuda, Hirofumi; Iijima, Takashi; Watanabe, Takayuki; Funakubo, Hiroshi.

In: Materials Research Society Symposium - Proceedings, Vol. 784, 01.12.2003, p. 207-212.

Research output: Contribution to journalConference article

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AU - Uchida, Hiroshi

AU - Koda, Seiichiro

AU - Matsuda, Hirofumi

AU - Iijima, Takashi

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

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AB - Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) 4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50) 1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

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