Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films

Hiroshi Uchida, Seiichiro Koda, Hirofumi Matsuda, Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journalConference article

Abstract

Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) 4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50) 1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Original languageEnglish
Pages (from-to)207-212
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume784
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventFerroelectric Thin Films XII - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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