Tight-binding approach to initial stage of the graphitization process on a vicinal SiC surface

Masato Inoue, Yoshihiro Kangawa, Katsunori Wakabayashi, Hiroyuki Kageshima, Koichi Kakimoto

Research output: Contribution to journalArticle

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Abstract

We study the process of growth of graphene by the SiC surface decomposition method to improve the technique of growing graphene. In thisstudy, the initial stage of the graphitization process on a periodically faceted SiC surface is investigated by the Naval Research Laboratory tightbinding approach. The results suggest that the decomposition of the SiC surface started by the desorption of Si atoms at the step edge. It is alsofound that released C atoms are trapped at the step-edge sites and that neighboring Si atoms are subsequently desorbed. These results suggest that graphene nucleation on the SiC surface proceeds in a negative step-flow mode.

Original languageEnglish
Article number038003
JournalJapanese journal of applied physics
Volume50
Issue number3
DOIs
Publication statusPublished - Mar 1 2011

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Graphitization
graphitization
Graphene
graphene
Atoms
Decomposition
atoms
decomposition
Research laboratories
Desorption
Nucleation
desorption
nucleation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Tight-binding approach to initial stage of the graphitization process on a vicinal SiC surface. / Inoue, Masato; Kangawa, Yoshihiro; Wakabayashi, Katsunori; Kageshima, Hiroyuki; Kakimoto, Koichi.

In: Japanese journal of applied physics, Vol. 50, No. 3, 038003, 01.03.2011.

Research output: Contribution to journalArticle

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