Tight-binding quantum chemical calculations of electronic structures of indium tin oxide

Chen Lv, Xiaojing Wang, Agalya Govindasamy, Hideyuki Tsuboi, Michihisa Koyama, Momoji Kubo, Hideyuki Ookawa, Akira Miyamoto

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    12 Citations (Scopus)

    Abstract

    We report a theoretical study on the electronic structures of indium oxide (In2O3) and indium tin oxide (ITO) carried out using our original tight-binding quantum chemical calculation program "Colors", which is over 5,000 times faster than the conventional first-principles quantum chemical calculation method. The calculated band gap of In2O 3 is in good agreement with the experimental results, although the value obtained by conventional first-principles calculation is less than half the experimental one. The electronic structures of In2O3 calculated by our tight-binding method are consistent with those obtained by first-principles calculations. Furthermore, the doping of tin atoms into In 2O3 increased the band gap, which is also in good agreement with the experimental tendency. Hence, we confirmed that our tight-binding quantum chemical calculation method was very effective for investigation and predicting the electronic structures of In2O 3 and ITO crystals with high accuracy and reliability in spite of its high calculation speed.

    Original languageEnglish
    Pages (from-to)2806-2809
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume44
    Issue number4 B
    DOIs
    Publication statusPublished - Apr 1 2005

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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