Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

R. Yokoyama, T. Nakamura, W. Sugimura, T. Ono, T. Fujiwara, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.

Original languageEnglish
Pages (from-to)77-83
Number of pages7
JournalJournal of Crystal Growth
Volume519
DOIs
Publication statusPublished - Aug 1 2019

Fingerprint

Crystal growth from melt
Silicon
Magnetic fields
Computer simulation
silicon
Buoyancy
magnetic fields
buoyancy
Flow patterns
plumes
flow distribution
simulation
oscillations
Experiments
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field. / Yokoyama, R.; Nakamura, T.; Sugimura, W.; Ono, T.; Fujiwara, T.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 519, 01.08.2019, p. 77-83.

Research output: Contribution to journalArticle

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