Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

R. Yokoyama, T. Nakamura, W. Sugimura, T. Ono, T. Fujiwara, K. Kakimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The time-dependent behavior of the silicon melt flow in the industrial scaled 300-mm diameter silicon Czochralski growth with a transverse magnetic field was investigated by both the experiment and numerical simulation. The measured temperatures at multiple positions in the melt showed oscillation with the same period but different amplitudes. The calculated results by the fully three-dimensional numerical simulation represented the measurement results and provided a qualitative explanation to this phenomenon. The periodic change of melt flow pattern occurred via the generating, descending, and vanishing of the cold plume. This behavior was driven by the buoyancy, which was similar to the flow under the non-magnetic field reported by Ozoe and Sung.

Original languageEnglish
Pages (from-to)77-83
Number of pages7
JournalJournal of Crystal Growth
Volume519
DOIs
Publication statusPublished - Aug 1 2019

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field'. Together they form a unique fingerprint.

  • Cite this