Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C

Mamoru Sakamoto; Kenichi Nakadozono; Keiichiro Iwanabe; Tanemasa Asano

doi:10.1109/ICSJ.2017.8240137

Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C

Mamoru Sakamoto, Kenichi Nakadozono, Keiichiro Iwanabe, Tanemasa Asano

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.

Original language	English
Title of host publication	2017 IEEE CPMT Symposium Japan, ICSJ 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	149-152
Number of pages	4
ISBN (Electronic)	9781538627129
DOIs	https://doi.org/10.1109/ICSJ.2017.8240137
Publication status	Published - Dec 26 2017
Event	2017 IEEE CPMT Symposium Japan, ICSJ 2017 - Kyoto, Japan Duration: Nov 20 2017 → Nov 22 2017

Publication series

Name	2017 IEEE CPMT Symposium Japan, ICSJ 2017
Volume	2017-January

Other

Other	2017 IEEE CPMT Symposium Japan, ICSJ 2017
Country	Japan
City	Kyoto
Period	11/20/17 → 11/22/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSJ.2017.8240137

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Sakamoto, M., Nakadozono, K., Iwanabe, K., & Asano, T. (2017). Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C. In 2017 IEEE CPMT Symposium Japan, ICSJ 2017 (pp. 149-152). (2017 IEEE CPMT Symposium Japan, ICSJ 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSJ.2017.8240137

Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C. / Sakamoto, Mamoru; Nakadozono, Kenichi; Iwanabe, Keiichiro; Asano, Tanemasa.

2017 IEEE CPMT Symposium Japan, ICSJ 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 149-152 (2017 IEEE CPMT Symposium Japan, ICSJ 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sakamoto, M, Nakadozono, K, Iwanabe, K & Asano, T 2017, Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C. in 2017 IEEE CPMT Symposium Japan, ICSJ 2017. 2017 IEEE CPMT Symposium Japan, ICSJ 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 149-152, 2017 IEEE CPMT Symposium Japan, ICSJ 2017, Kyoto, Japan, 11/20/17. https://doi.org/10.1109/ICSJ.2017.8240137

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abstract = "Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.",

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AB - Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.

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