TY - GEN
T1 - Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C
AU - Sakamoto, Mamoru
AU - Nakadozono, Kenichi
AU - Iwanabe, Keiichiro
AU - Asano, Tanemasa
N1 - Funding Information:
The authors are grateful to Shinkawa Ltd., Tokyo, Japan for the use of the ultrasonic bonding machine and useful discussion. This work was supported in part by the Matching Planner Program (No. MP28116808463) of JST.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/12/26
Y1 - 2017/12/26
N2 - Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.
AB - Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.
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U2 - 10.1109/ICSJ.2017.8240137
DO - 10.1109/ICSJ.2017.8240137
M3 - Conference contribution
AN - SCOPUS:85049238871
T3 - 2017 IEEE CPMT Symposium Japan, ICSJ 2017
SP - 149
EP - 152
BT - 2017 IEEE CPMT Symposium Japan, ICSJ 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE CPMT Symposium Japan, ICSJ 2017
Y2 - 20 November 2017 through 22 November 2017
ER -