Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers

Reiji Hattori, T. Enomoto, J. Shirafuji

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Longitudinal electron transport in a-Si:H/a-SiNx:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.

Original languageEnglish
Pages (from-to)711-713
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1989
Externally publishedYes

Fingerprint

Amorphous semiconductors
amorphous semiconductors
Tunnels
Multilayers
Electrons
electrons
barrier layers
tunnels
energy distribution
trapping
Electron Transport

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers. / Hattori, Reiji; Enomoto, T.; Shirafuji, J.

In: Journal of Non-Crystalline Solids, Vol. 114, No. PART 2, 02.12.1989, p. 711-713.

Research output: Contribution to journalArticle

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