Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers

R. Hattori, T. Enomoto, J. Shirafuji

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Abstract

Longitudinal electron transport in a-Si:H/a-SiNx:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.

Original languageEnglish
Pages (from-to)711-713
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1989
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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